Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy

Abstract

We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375°C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec, which explains the superior crystalline quality of our epitaxial film.

Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR-Assisted MBE

“…1. However, the value was still broader than the FWHMs (37 arcmin [4], 52 arcmin [5], 96 arcsec [6]) of InN heteroepilayers on sapphire substrates reported so far. Furthermore, the FWHM of the 880 nm thick InN heteroepilayer with buffer layer on Si(001) was 3.3 , which was broader than that on Si(111), but sharper than those of the series of samples without introduction of buffer layers in Fig.…”

“…Nevertheless, only several researchers [1][2][3][4][5][6][7][8][9][10] reported the film growth of wurtzite-InN (a-InN) on glass [1,2], KBr [2], (0001) sapphire [4][5][6][7][8], (0001) GaN [3] and (111) GaAs [9], and of zincblende-InN (b-InN) on (001) GaAs [3] and (111) GaP [10] because of difficulty of crystal growth. To our knowledge, there were no reports on luminescence from InN heteroepilayers probably because of the very degraded crystalline quality, and only a few experimental results on infrared absorption [1,2] and Raman scattering [3] have been reported so far in optical properties of a-InN crystal.…”

InN growth and annealing investigations using in-situ spectroscopic ellipsometry

“…Difficulties arise from the lack of substrates with a low lattice mismatch, when using ammonia at temperatures as low as 500 1C, and consequently the high nitrogen partial pressure [1].…”

Porous Si(111) and Si(100) as an intermediate buffer layer for nanocrystalline InN films

“…These substrates can serve as a backside ohmic contact. Indium nitride films have been prepared by reactive sputtering methods [9] and vapor phase deposition methods (MOCVD [10], MOVPE [11]). In the former, there have been several complicated and ambiguous relations between deposition conditions and properties of deposited films.…”