Growth and structure of thermally evaporated Bi2Te3 thin films

Рогачева, Е. И.; Budnik, A. V.; Dobrotvorskaya, M.V.; Fedorov, A. I.; Krivonogov, S. I.; Mateychenko, P.V.; Nashchekina, O. N.; Sipatov, A. Yu.

doi:10.1016/j.tsf.2016.05.046

Cited by 22 publications

(6 citation statements)

References 33 publications

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“…Specifically, with Bi 2 Te 3 thin film fabricated on glass substrates using thermal evaporation, the oscillation of the Seebeck coefficient depends on thickness below 100 nm. It becomes stable similar to bulk material value above 100 nm [10][11][12]. This result is also reproduced on BiSe thin films fabricated using thermal evaporation on a glass substrate [13].…”

Section: Introductionsupporting

confidence: 75%

“…All these studies share a common feature: each sample is made one by one, followed by sophisticated measurements [1,7,[10][11][12][13][14][15][16][17]. The properties of each sample depend on many fabrication details, such as the substrate temperature, its surface cleanliness, the stoichiometry of each component, vacuum chamber pressure, or cross-contaminations.…”

Section: Introductionmentioning

confidence: 99%

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An in-situ thermoelectric measurement apparatus inside a thermal-evaporator

Nguyen

Bui-Thanh

Pham

et al. 2023

Meas. Sci. Technol.

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At the ultra-thin limit below 20 nm, a film's electrical conductivity, thermal conductivity, or thermoelectricity depends heavily on its thickness. In most studies, each sample is fabricated one at a time, potentially leading to considerable uncertainty in later characterizations. We design and build an in-situ apparatus to measure thermoelectricity during their deposition inside a thermal evaporator. A temperature difference of up to 2 K is generated by a current passing through an on-chip resistor patterned using photolithography. The Seebeck voltage is measured on a Hall bar structure of a film deposited through a shadow mask. The measurement system is calibrated carefully before loading into the thermal evaporator. This in-situ thermoelectricity measurement system has been thoroughly tested on various materials, including Bi, Te, and Bi2Te3, at high temperatures up to 500 K.

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Section: Introductionsupporting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

An in-situ thermoelectric measurement apparatus inside a thermal-evaporator

Nguyen

Bui-Thanh

Pham

et al. 2023

Meas. Sci. Technol.

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“…Bi 2 Te 3 and Sb 2 Te 3 are among the best low-temperature TE semiconductors so far. Thin films based on the two compounds have been prepared by various methods, including sputtering [6,[14][15][16], MOCVD [17,18], flash evaporation [19], co-evaporation [4,7,[20][21][22][23], thermal evaporation from a single source [24][25][26][27][28][29][30], electrochemical deposition [3,5] and laser deposition [31,32]. In this paper, we first evaluated the TE properties of Bi 2 Te 3 and Sb 2 Te 3 films prepared at different substrate temperatures.…”

Section: Introductionmentioning

confidence: 99%

A thin film thermoelectric device fabricated by a self-aligned shadow mask method

Yang

Zheng

Wang

et al. 2017

J. Micromech. Microeng.

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A planar thermoelectric device with 20 pairs of Sb2Te3 and Bi2Te3 thin-film legs was fabricated by using a facile self-aligned shadow mask method in combination with a thermal evaporation process. Effects of substrate temperature during the evaporation process on the Seebeck coefficient and electrical conductivity of the thin films have been investigated. The maximum Seebeck coefficient was found to be 158 µV K−1 for the Sb2Te3 film produced at 260 °C and −148 µV K−1 for the Bi2Te3 film produced at 230 °C. The device was fabricated on a glass substrate under the above optimal conditions. At a temperature difference of 90 K, it demonstrated an open-circuit voltage of more than 0.5 V (which was equivalent of a sensitivity of 5.40 mV K−1) and a maximum output power of 1.105 µW.

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“…Следует отметить, что из-за особенностей роста пленок их электрические свойства зависят от морфологии и материала подложки, чем можно объяснить повышенные электрические сопротивления пленок в данной работе и что является предметом дальнейших исследований. Однако принципиальная возможность достижения высоких свойств многокомпонентных пленок теллурида висмута на полиимидных подложках показана в ряде работ [25,26].…”

Section: результаты и обсуждениеunclassified

Получение Тонких Пленок Теллурида Висмута На Полиимидных Подложках Методом Импульсного Лазерного Осаждения

Шупенев¹,

Коршунов²,

Григорьянц³

2020

Физика И Техника Полупроводников

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В настоящей работе сообщается об особенностях получения тонких термоэлектрических пленок p-Bi0.5Sb1.5Te3 и n-Bi2Te2.7Se0.3 с характерной толщиной ~300 нм на полиимидном материале методом импульсного лазерного осаждения. Рассмотрено влияние температуры роста, давления и расстояния между мишенью и подложкой на свойства пленок. Достигнуты высокие значения коэффициента Зеебека 220 и -200 мкВ/К, но факторы электрической мощности для пленок p- и n-типа составили 9.7 и 5.0 мкВт/см·K2 соответственно из-за достаточно высоких сопротивлений пленок. Ключевые слова: тонкие пленки, импульсное лазерное осаждение, термоэлектрический эффект, теллурид висмута, полиимид.

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Growth and structure of thermally evaporated Bi2Te3 thin films

Cited by 22 publications

References 33 publications

An in-situ thermoelectric measurement apparatus inside a thermal-evaporator

An in-situ thermoelectric measurement apparatus inside a thermal-evaporator

A thin film thermoelectric device fabricated by a self-aligned shadow mask method

Получение Тонких Пленок Теллурида Висмута На Полиимидных Подложках Методом Импульсного Лазерного Осаждения

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