Growth and characterization of β-Ga2O3 crystals

Николаев, В. И.; Maslov, V. N.; Степанов, С. И.; Pechnikov, A. I.; Krymov, V. M.; Никитина, И.П.; Guzilova, L. I.; Bougrov, V. E.; Романов, А. Е.

doi:10.1016/j.jcrysgro.2016.05.049

Cited by 51 publications

(28 citation statements)

References 20 publications

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“…For most semiconductors, the implant activation temperature generally follows a two-thirds rule of thumb with respect to the melting point. 28 The melting temperature of Ga 2 O 3 is 1793-1820°C, 1,5,[29][30][31][32] so the 2/3 rule for implant activation annealing suggests temperatures in the range 1150-1250°C to achieve significant activation percentages. Activation annealing has typically been carried out at 900-1000°C for 30 min, with activation percentages approaching 60%.…”

Section: Methodsmentioning

confidence: 99%

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃

Tadjer

Fares

Mahadik

et al. 2019

ECS J. Solid State Sci. Technol.

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The commonly used n-type dopants, Si and Sn, were implanted into bulk (−201) β-Ga 2 O 3 over a 2 order of magnitude dose range and annealed at temperatures from 1000-1150°C. The original lattice parameters were restored by annealing at 1150°C for the highest dose Si implants, while only partial recovery was observed in Sn implanted samples. The Sn implanted samples had overall lower lattice parameters compared to the Si implanted samples, indicating that Sn generates tensile strain in the Ga 2 O 3 lattice. The rocking curve FWHM was observed to increase with the annealing process, indicating that the annealing process does not improve the crystal quality. Transmission electron microscopy showed removal of the end-of-range lattice damage after 1150°C anneals of the heaviest implanted species, Sn. Cathodoluminescence at 5K showed recovery of intensity of the common UV band around 3.2 eV after annealing. Secondary Ion Mass Spectrometry profiling showed the presence of concentration-dependent diffusion of both Si and Sn, with values for diffusivity at 1150°C of 9.5 × 10 −13 cm.s −1 for Si and 1.7 × 10 −13 cm.s −1 for Sn obtained by fitting through the FLOOPS simulation package.

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Section: Methodsmentioning

confidence: 99%

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃

Tadjer

Fares

Mahadik

et al. 2019

ECS J. Solid State Sci. Technol.

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“…A simple expedient is to perform the implant activation anneals in O 2 ambient. [37][38][39][40] One surprising feature of the few implantation studies to date has been the high diffusivities of some of the implanted species. [34] Secondary Ion Mass Spectrometry (SIMS) depth profiles of Mg and N are shown in Fig.…”

Section: Ohmic Contactsmentioning

confidence: 99%

“…For most semiconductors, the implant activation temperature generally follows a two-thirds rule with respect to the melting point. [33] The melting temperature of Ga 2 O 3 is 1793-1820°C, [1,39,40] so the 2/3 rule for implant activation annealing suggests temperatures in the range 1150-1250°C. This is higher than generally employed to date.…”

Section: Prospective Articlementioning

confidence: 99%

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Device processing and junction formation needs for ultra-high power Ga2O3 electronics

et al. 2019

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“…Thin films and nanostructures of Ga 2 O 3 find numerous applications in high‐temperature sensors, electronics, luminescent phosphors, antireflection coatings, lithium batteries, and solar cells . Also, the high‐temperature stability coupled with deep ultraviolet transparency makes Ga 2 O 3 ‐based materials as the potential candidates for integrated sensors for extreme environment conditions and transparent electrode applications in UV optoelectronics, photonics, and thin‐film transistors . Furthermore, it has been reported and demonstrated in the literature that Ga 2 O 3 presents interesting physicochemical properties and device applications, which can be tuned by the presence of dopants.…”

Section: Introductionmentioning

confidence: 99%

Molybdenum Incorporation Induced Enhancement in the Mechanical Properties of Gallium Oxide Films

Battu

Manandhar

Ramana

2017

Adv Materials Inter

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However, in all these applications, fundamental understanding of the physics and chemistry of Ga-oxide-based nanomaterials so as to provide a better control on the interplay between surface/interface structure, thermodynamic conditions, chemical processes, and kinetics is the key to achieving enhanced efficiency as well as control over the environmental pollutants.The mechanical properties of metaloxide nanostructures are quite important for utilizing them in energy related applications, such as absorber layers in concentrated solar power plants and integrated sensors in oxy-combustion as encountered in coal-based power plants. Thus, fundamental knowledge of such nanomaterials' mechanical behavior and the relationship with the microstructure is critical to effectively utilize them in practical applications, where the presence of extreme environments (higher temperature and pressures) is common. Under such conditions, it becomes critical to understand how the structural modifications (if any) affect the other properties, most importantly the mechanical characteristics which determine their survivability. For example, the materials which are used in microelectronics, sensors, and semiconductor devices must perform their function, but they must also meet certain chemical and mechanical properties to be able to function and not to failure easily. [24,25] These devices must be reliable, durable, and must possess structural integrity over their lifetime. Therefore, the material chosen must provide adequate resistance to the mechanical and chemical changes arises in the specific applications during the performance. The mechanical behavior of nanomaterials focuses on the two points at a high rate of loading. Using the materials under specific conditions where the material should sustain to sudden impact loads or temperatures fluctuations is the first. A deeper understanding of the mechanical properties and how the mechanical characteristics depend on different types of applied stresses is most important. Understanding the relation between physical phenomena and molecular structure in view of the variation of the stress-strain diagram with different peak indent loading rates is the later. [24][25][26] Such a detailed understanding will enable the design and development of advanced, high-performance structural materials. [27,28] In this context, for the first time, the present work was focused on using a mechanically resilient metal (Mo) to incorporate into Ga-oxide to provide excellent physical and thermomechanical characteristics, which are essential to utilize the Ga-oxide nanomaterials in energy related device applications. An approach to design Ga 2 O 3 -based nanomaterials with tunable mechanical properties is presented. In the molybdenum (Mo) incorporated Ga 2 O 3 model system, where Mo content (x) is varied up to ≈11 at%, Mo-incorporation induced effects are significant on the structural and mechanical properties. Single-phase β-Ga 2 O 3 formation occurs for lower Mo content (≤4 at%); however, higher Mo content ind...

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Growth and characterization of β-Ga2O3 crystals

Cited by 51 publications

References 20 publications

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃

Device processing and junction formation needs for ultra-high power Ga2O3 electronics

Molybdenum Incorporation Induced Enhancement in the Mechanical Properties of Gallium Oxide Films

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Growth and characterization of β-Ga2O3 crystals

Cited by 51 publications

References 20 publications

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3

Device processing and junction formation needs for ultra-high power Ga2O3 electronics

Molybdenum Incorporation Induced Enhancement in the Mechanical Properties of Gallium Oxide Films

Contact Info

Product

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Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃