Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD

The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate

“…The low-temperature and high-temperature AlN buffer layers were used to improve the quality of the epitaxial GaN films, and much work has been done recently in this field [8][9][10][11]. Quality of GaN could also be improved by using AlN or AlGaN interlayers [12,13].…”

On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

“…It can be seen from Table I that the crystal quality of the samples improves as the interlayer growth temperature was increased from 930 to 990 C. FWHM values of (002) and (102) of the LED III and LED IV are both close to 200 arc sec, suggesting that the higher growth temperature of the interlayer could effectively reduce the dislocation density, especially the edge threading dislocation density. 7 Photoluminescence (PL) spectra mapping were performed using a PL mapper (Nanometric RPM2000) equipped with a 15 mW He-Cd laser (325 nm) as the excitation source. Electroluminescence (EL) was tested on the epi-wafers using the 9 points Quick tester (M2442S-9A Quatek Group).…”

Study of polarization field in GaN-based blue LEDs on Si and sapphire substrate by electroluminescence

“…Growth process has been reported [5]. Here the two kinds of samples are marked as sample A and sample B for GaN-based blue LEDs on Si substrate and on c-Al 2 O 3 (0 0 0 1) substrate, respectively.…”