We have investigated the growth and electrical properties of crystalline Gd 2 O 3 grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd 2 O 3 islands with hexagonal structure were formed. Further growth resulted in the formation of flat layers in a mixture of -oriented cubic bixbyite and monoclinic structure. The fabricated capacitors with 14 nm Gd 2 O 3 exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10 −8 A/…
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