volume 147, issue 2-3, P108-113 2008
DOI: 10.1016/j.mseb.2007.08.013
View full text
|
Sign up to set email alerts
|
Share

Abstract: Using a modified droplet epitaxy approach in metal-organic vapour phase epitaxy (MOVPE), we have grown InGaN quantum dots (QDs) on top of a 20-period AlN/GaN distributed Bragg reflector (DBR). The QDs were located at the centre of a ca. 182 nm GaN layer. To complete the cavity a three-period SiO x /SiN x DBR was deposited onto the GaN surface. Despite the evolution of roughness during the growth of the AlN/GaN DBR, due to cracking of the AlN layers, a cavity mode was observed, with a quality-factor of ∼50. En…

Expand abstract