Using a modified droplet epitaxy approach in metal-organic vapour phase epitaxy (MOVPE), we have grown InGaN quantum dots (QDs) on top of a 20-period AlN/GaN distributed Bragg reflector (DBR). The QDs were located at the centre of a ca. 182 nm GaN layer. To complete the cavity a three-period SiO x /SiN x DBR was deposited onto the GaN surface. Despite the evolution of roughness during the growth of the AlN/GaN DBR, due to cracking of the AlN layers, a cavity mode was observed, with a quality-factor of ∼50. En…
scite is a Brooklyn-based startup that helps researchers better discover and evaluate scientific articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by researchers from dozens of countries and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.