Oxide-based optoelectronic devices have been limited in applicable wavelength to the near-UV region because there are few viable binary wurtzite-type oxides, but ternary wurtzite-type (β-NaFeO 2 -type) oxides are promising materials to expand the applicable wavelengths of these devices. In the past decade, many attractive properties of β-NaFeO 2 -type oxide semiconductors have been revealed, such as the band-engineering of ZnO by alloying with β-LiGaO 2 and β-AgGaO 2 , the photocatalytic activities of β-AgGaO 2 and β-AgAlO 2 , and the discovery that β-CuGaO 2 is suitable for thin-film solar-cell absorbers. In this review article, we consider previous studies of β-NaFeO 2 -type oxide semiconductors-β-LiGaO 2 , β-AgGaO 2 , β-AgAlO 2 , β-CuGaO 2 -and their alloys with ZnO, and discuss their structural features, optical and electrical properties, and the relationship between their crystal structures and electronic band structures. We describe the outlook of β-NaFeO 2 -type oxide semiconductors and the remaining issues that hinder the development of optoelectronic devices made from β-NaFeO 2 -type oxide semiconductors.