Grain resistivity in zinc oxide and tin dioxide varistor ceramics

Ivon, A.I.; Glot, A.B.; Lavrov, R.I.; Lu, Zhenya

doi:10.1016/j.jallcom.2014.07.178

Cited by 14 publications

(14 citation statements)

References 27 publications

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“…The assumed electron mobility in tin dioxide grains can be approximately μ ¼ 200 cm 2 V À 1 s À 1 [16]. At present, we have not measured the grain resistivity in the SnCoNbCrBi sample but it was assumed to be ρ g ¼ 27:6 Ω cm À 1 because this value we have obtained recently for a ceramic sample with a composition nearly identical to the sample SnCoNbCr [18]. Bismuth ions exhibit quite a large ionic radius and due to that they cannot diffuse into SnO 2 grains.…”

Section: Samplementioning

confidence: 95%

Electrical properties of SnO2 ceramics for low voltage varistors

Glot

Bulpett

Ivon

et al. 2015

Physica B: Condensed Matter

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Section: Samplementioning

confidence: 95%

Electrical properties of SnO2 ceramics for low voltage varistors

Glot

Bulpett

Ivon

et al. 2015

Physica B: Condensed Matter

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“…The lowest leakage current density of ZnO varistors was 348 µA/cm 2 , which was obtained from 12 wt.% of BaTiO 3 content. This indicates that a high resistivity of the ceramics, where the electrical conduction mechanism is controlled by the barrier height present at the grain boundaries [29]. Hence, it is important to reduce the leakage current to as low levels as possible.…”

Section: Current Density-electric Field (J-e) Measurementmentioning

confidence: 99%

Microstructure and Electrical Properties of Low-Voltage Barium Titanate Doped Zinc Oxide Varistor Ceramics

Shaifudin*,

Ghazali*,

Abdullah

et al. 2019

IJRTE

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In the present, varistor ceramics through the combination of zinc oxide (ZnO) with a perovskite material have become widespread because of their unique properties for a wide range of applications in electronic protection devices. Low-voltage zinc oxide (ZnO) varistors with fast response and highly nonlinear electrical properties for overvoltage protection in an integrated circuit are increasingly significant in the application of low-voltage electronics. The present study highlights the interaction between barium titanate (BaTiO3 ) and ZnO varistors through the employment of solid-state reaction method in the production of low-voltage varistors. The effects of BaTiO3 on the microstructure of ZnO varistors were analyzed through scanning electron microscopy (SEM), energy dispersive X-ray analysis spectroscopy (EDS) and X-ray diffraction (XRD). The EDS analysis and XRD measurements suggest the presence of ZnO and BaTiO3 phases. The electrical properties of BaTiO3 -doped ZnO varistors were examined based on the current density-electric field (J-E) characteristics measurement. The varistor properties showed the nonlinear coefficient (α) from 1.8 to 4.8 with the barrier height (φB) ranged from 0.70 to 0.88 eV. The used of BaTiO3 additive in ZnO varistors produced varistor voltages of 4.7 to 14.1 V/mm with the voltage per grain boundary (Vgb) was measured in the ranges 0.03 to 0.05 V. The lowest leakage current density was 348 µA/cm2 , obtained at the samples containing 12 wt.% BaTiO3 with high barrier height. The reduction in barrier height with increasing BaTiO3 content was associated with the excessive amount of BaTiO3 phase, hence cause the deterioration of active grain boundary due to the variation of oxygen (O) vacancies in the grain boundary.

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“…Как следует из табл. 3, для диапазона температур 150-300 К температурные зависимости электросопротивления в легированных железом керамиках 3-8 подчиняются закону (1) с энергий активации проводимости ∆Е σ ~0,37 эВ. Это значение Е σ существенно превышает известные из литературы значения 0,25 ± 0,02 эВ для поликристаллических пленок ZnO с содержанием железа 0,2 % (вес.…”

Section: результаты и их обсуждениеunclassified

“…В настоящее время особое внимание уделяется поиску экономичных технологий производства, а также исследованию структуры и свойств новых керамических композиционных материалов на основе оксида цинка [1]. Такие керамики имеют ряд преимуществ по сравнению с материалами, полученными по более дорогим технологиям, поскольку дают возможность изготавливать изделия различных форм и размеров, в том числе с варьированием их морфологии и структурно−фазового состояния.…”

Section: Introductionunclassified

Structure and electric properties of zink oxide−based ceramics doped with iron

Pashkevich

Kasyuk

Bliznyuk³

et al. 2019

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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The structure and electrical properties of (FexOy)10 (ZnO)90 ceramics (0 ≤ x ≤ 3; 1 ≤ y ≤ 4) synthesized in air by one− and two−stage method were studied. To dope ZnO, powders of FeO, α−Fe2O3, and Fe3O4 or a mixture (α−Fe2O3 + FeO) were used. On the basis of X−ray diffraction analysis, gamma−resonance spectroscopy and Raman spectroscopy, it was established that at fixed average iron concentrations of 1—3 at.% in ceramic samples, at least three phases are formed: solid solution Zn1−δFeδO with wurtzite structure and residual iron oxides FexOy, used as doping agents. Scanning electron microscopy and energy−dispersive X−ray analysis have shown that, in the studied ceramics, the grain sizes of the wurtzite phase decreased from several tens of micrometers using one−step synthesis to the submicron level for the case of two−step synthesis. It was found that the incorporation of iron into ZnO leads to a contraction of the crystal lattice in the wurtzite phase and the stronger, the higher the proportion of oxygen in the doping iron oxides FexOy. The study of the temperature dependences of the electrical resistivity have shown that deep donor centers with an activation energy of about 0.35 eV are formed in the wurtzite phase Zn1−δFeδO. The temperature dependences of the electrical resistivity in the undoped ZnO in the temperature range of 6—300 K and in the doped ceramics (FexOy)10(ZnO)90, obtained by the one−step synthesis method, at temperatures below 50 K, are characterized by a variable activation energy, which indicates a strong disordering of their structure.

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Grain resistivity in zinc oxide and tin dioxide varistor ceramics

Cited by 14 publications

References 27 publications

Electrical properties of SnO2 ceramics for low voltage varistors

Electrical properties of SnO2 ceramics for low voltage varistors

Microstructure and Electrical Properties of Low-Voltage Barium Titanate Doped Zinc Oxide Varistor Ceramics

Structure and electric properties of zink oxide−based ceramics doped with iron

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