Goos-Hänchen-like shift of three-level matter wave incident on Raman beams

Duan, Zhenglu; Hu, Li-Yun; Xu, Xue-Xiang; Liu, Cunjin

doi:10.1364/oe.22.017679

Cited by 4 publications

(2 citation statements)

References 33 publications

(42 reference statements)

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“…During the last decades, analogies of the spatial GH shift have been widely studied in acoustics, electronics, atomic optics, and particle physics. Interest in this phenomenon does not weaken up to now [3][4][5][6][7][8][9][10][11][12][13]. In particular, many works have been devoted to the electronic analog of the GH effect in semiconductor and graphene-based nanostructures with like-Dirac Hamiltonian (see Ref.…”

Section: Introductionmentioning

confidence: 99%

Spin- and valley-dependent Goos–Hänchen effect in silicene and gapped graphene structures

Azarova¹,

Maksimova²

2017

Journal of Physics and Chemistry of Solids

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We investigate the Goos-Hänchen shift for ballistic electrons (i) reflected from a step-like inhomogeneity of the potential energy and (or) effective mass, and (ii) transmitted through a ferromagnetic barrier region in monolayer silicene or gapped graphene. For the electrons reflected from a single interface we found that the Goos-Hänchen shift is valley-polarized for gapped graphene structure, and valley-and spin-polarized for silicene due to the spin-valley coupling. Incontrast, for example, to gapless graphene the lateral beam shift in gapped structures occurs not only in the case of total, but also of partial, reflection, i.e. at the angles smaller than the critical angle of total reflection. We have also demonstrated that the valley-and spin-polarized displacement of the electron beam, transmitted through a ferromagnetic silicene barrier, resonantly depends on the barrier width. The resonant values of the displacement can be controlled by adjusting the electric potential, the external perpendicular electric field, and the exchange field induced by an insulating ferromagnetic substrate.

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Section: Introductionmentioning

confidence: 99%

Spin- and valley-dependent Goos–Hänchen effect in silicene and gapped graphene structures

Azarova¹,

Maksimova²

2017

Journal of Physics and Chemistry of Solids

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“…It is worth m entioning that the negative GH shift may appear in negative perm ittivity m edia [4], absorbing m edia [5][6][7][8], and negative refractive media. The GH shift can appear in the reflection o f partial coherence light [9], neutrons [10], electrons [11,12], spin waves [13], and m atter waves [14]. It is w idely believed that the shift is a coherence phenom enon; however, the degree o f spatial coherence o f light does not influence the GH shift [15].…”

Section: Introductionmentioning

confidence: 99%

Goos-Hänchen shift in a standing-wave-coupled electromagnetically-induced-transparency medium

et al. 2015

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The Goos-Hiinchen shift of the system composed by two cavity walls and an intracavity atomic sample is presented. The atomic sample is treated as a four-level double-A system, driven by the two counterpropagating coupling fields. The probe field experiences the discontinuous refractive index variation and is reflected. Moreover, under the phase-matching condition, the four-wave mixing effect based on electromagnetically induced transparency can cause effective reflection. The Goos-Hiinchen shifts appear in both situations and are carefully investigated in this article. We refer to the first one with the incident and reflected light having identical wavelength as the linear Goos-Hiinchen shift, and the second one with the reflection wavelength determined by the phase-matching condition as the nonlinear Goos-Hiinchen shift. The differences between the two kinds of shifts, such as the incident angle range, conditions for the shift peaks, and controllability, are discussed.

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Goos-Hänchen shifts in spin-orbit-coupled cold atoms

et al. 2015

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We consider a matter wave packet of cold atom gas impinging upon a step potential created by the optical light field. In the presence of spin-orbit (SO) coupling, the atomic eigenstates contain two types of evanescent states, one of which is the ordinary evanescent state with pure imaginary wave vector while the other possesses complex wave vector and is recognized as oscillating evanescent state. We show that the presence and interplay of these two types of evanescent states can give rise to two different mechanisms for total internal reflection (TIR), and thus lead to unusual Goos-Hänchen (GH) effect. As a result, not only large positive but also large negative GH shift can be observed in the reflected atomic beam. The dependence of the GH shift on the incident angle, energy and height of the step potential is studied numerically. *

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Goos-Hänchen-like shift of three-level matter wave incident on Raman beams

Cited by 4 publications

References 33 publications

Spin- and valley-dependent Goos–Hänchen effect in silicene and gapped graphene structures

Spin- and valley-dependent Goos–Hänchen effect in silicene and gapped graphene structures

Goos-Hänchen shift in a standing-wave-coupled electromagnetically-induced-transparency medium

Goos-Hänchen shifts in spin-orbit-coupled cold atoms

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