Giant Magnetotransport Phenomena in Filling-Controlled Kondo Lattice System: La1-xSrxMnO3

Tokura, Y.; Urushibara, A.; Moritomo, Y.; Arima, T.; Asamitsu, A.; Kido, G.; Furukawa, Nobuo

doi:10.1143/jpsj.63.3931

Cited by 805 publications

(397 citation statements)

References 11 publications

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“…3(a), ρ out ⊥ (T ) and ρ in ⊥ (T ) indicate the resistance measured with H oriented out of plane and in plane with respect to the FeFED plane, respectively. The magnitude of MR out (MR in ) decreases by polarization switching, driving the LSMO from the depletion to the accumulation state, similar to chemical-doping experiments [21]. Moreover, the distinct difference obtained between MR out and MR in , for both states, indicates an anisotropy of the MR out (MR in ).…”

Section: Resultssupporting

confidence: 80%

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

et al. 2014

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Ferroelectric field-effect devices based on perovskite oxide materials offer a new possibility to exploit emergent interfacial effects such as the electrostatic modification of the transport and magnetic properties of strongly correlated materials and to prove the magneto-electric coupling at the interface between the two different ferroic materials. Here we report on the reversible modulation of the interfacial magnetic and magnetotransport properties of La 0.825 Sr 0.175 MnO 3 thin films induced by switching the ferroelectric polarization of a top PbZr 0.2 Ti 0.8 O 3 layer. Anisotropic magnetoresistance (AMR) measurements were performed applying a magnetic field H in a plane perpendicular to the current density. By rotating H from the out-of-plane towards the in-plane direction, upon the ferroelectric polarization switching, a modulation of the normalized AMR amplitude was achieved. The dynamical electrostatic coupling at the interface of the two oxides is responsible for a reconstruction of the Mn 3de g orbitals which in turn affects the surface magnetic anisotropy of the magneto-electric system. The present work might have a broader impact, including in the field of multiferroic tunnel junctions, due to a better understanding of the coupling at the interface of the two ferroic oxides where the influence of the polarization on the magnetic degree of freedom is accomplished.

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Section: Resultssupporting

confidence: 80%

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

et al. 2014

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“…4 At the present stage, however, we think this mechanism is not appropriate for TPP͓Fe͑Pc͒͑CN͒ 2 ͔ 2 . The reason is as follows: In order to apply this mechanism to TPP͓Fe͑Pc͒͑CN͒ 2 ͔ 2 , large canting of the d spin is necessary.…”

Section: E Possible Mechanism Of Gnmrmentioning

confidence: 76%

“…1,2 Here, Pc and TPP denote phthalocyanine and tetraphenylphosphonium, respectively. This GNMR is an interesting phenomenon both experimentally and theoretically, 3 since it is not caused by a sharp transition such as the field-induced metal-insulator transition observed in the manganese oxides 4 and -͑BETS͒ 2 FeCl 4 . 5 It is highly anisotropic for the magnetic-field direction, reflecting the molecular orientation of ͓Fe͑Pc͒͑CN͒ 2 ͔.…”

Section: Introductionmentioning

confidence: 89%

Magnetic torque and heat capacity measurements onTPP[Fe(Pc)(CN)2
Tajima
¹
,
Yoshida
²
,
Matsuda
³

et al. 2008
Phys. Rev. B
29
0
13
0
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Magnetic torque and heat capacity measurements on TPP͓Fe͑Pc͒͑CN͒ 2 ͔ 2 are reported. The torque curves for the magnetic field rotated within the ab plane have a fourfold symmetry, exhibiting inversions around 13 and 27 K. The heat capacity exhibits a broad peak around T = 16.5 K. By applying the magnetic field along the c axis, the maximum value of the heat capacity is enhanced below 20 K. These results, as well as the magnetic susceptibility, were analyzed by employing a numerical calculation based on the anisotropic Heisenberg model in one dimension. The analyses revealed that: ͑i͒ the peak in the magnetic-susceptibility data around 25 K is due to an antiferromagnetic short-range order ͑SRO͒ formation associated with d electrons, and ͑ii͒ electrons fall into an antiferromagnetic state below 13 K. The spin-flop field of electrons is approximately 80 kOe at 9 K.

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“…The CMR effect observed in some doped manganese based oxides (manganites) has attracted much attention for the theoretical as well as experimental studies [1][2][3][4]. They are insulators at high temperatures but poor metals at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

The role of CDW gap on the magnetic phase transition in CMR materials

Panda¹,

Rout

2009

Indian J Phys

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:We propose a model to study the magnetic phase transition in the Colossal-Magneto-Resistance (CMR) material of general type R 1-x A x MnO 3 (R = La, Sm, Nd; A = Ca, Sr, Ba). The model Hamiltonian consists of a Charge Density Wave (CDW) gap in the e g -band and the strong magnetic field due to the spin ordering in the localized t g core electrons. The Hamiltonian is solved by using Zubarev's Green's function technique to calculate CDW gap (∆) and magnetization (M d ) in t 2g band. Both of them are solved self-consistently. Their combined effect on the temperature dependent magnetization (M c ) due to the e g band electrons is investigated. Both the magnitude and the transition temperature of (M c ) are strongly influenced by both ∆ and M d . Hence the hopping of the band electrons are strongly controlled by these two long range interactions. The results are discussed by varying the model parameters of the manganite system.

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Giant Magnetotransport Phenomena in Filling-Controlled Kondo Lattice System: La_1-xSr_xMnO₃

Cited by 805 publications

References 11 publications

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

Magnetic torque and heat capacity measurements onTPP[Fe(Pc)(CN)2
Tajima
¹
,
Yoshida
²
,
Matsuda
³

et al. 2008
Phys. Rev. B
29
0
13
0
View full text Add to dashboard Cite

The role of CDW gap on the magnetic phase transition in CMR materials

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Giant Magnetotransport Phenomena in Filling-Controlled Kondo Lattice System: La1-xSrxMnO3

Cited by 805 publications

References 11 publications

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

Magnetic torque and heat capacity measurements onTPP[Fe(Pc)(CN)2Tajima1, Yoshida2, Matsuda3 et al. 2008Phys. Rev. B290130View full textAdd to dashboardCite

The role of CDW gap on the magnetic phase transition in CMR materials

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Giant Magnetotransport Phenomena in Filling-Controlled Kondo Lattice System: La_1-xSr_xMnO₃

Magnetic torque and heat capacity measurements onTPP[Fe(Pc)(CN)2
Tajima
¹
,
Yoshida
²
,
Matsuda
³

et al. 2008
Phys. Rev. B
29
0
13
0
View full text Add to dashboard Cite