Geometric Effect of Channel on Device Performance in Pentacene Thin-Film Transistor

Kang, Seong Jun; Noh, Maengseok; Park, Daesik; Kim, Hui Jung; Kim, Sang Yeol; Koo, Bon Won; Kang, In Man; Whang, C. N.

doi:10.1143/jjap.43.7718

Cited by 8 publications

(6 citation statements)

References 2 publications

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“…It has been reported that field effect mobility in OTFTs of pentacene fabricated over glass decreases as channel width increases at constant channel length. [15] The similar result has been observed in this investigation where devices with smaller channel width exhibit higher field effect mobility as compared to the devices with longer channel width initially for a constant channel length of 72 µm.…”

supporting

confidence: 86%

“…It has been reported that the mobility in organic semiconductors depends upon a number of factors such as field, grain scattering, geometry of channel etc. [14,15] By varying the channel width of the two sets of devices from 1.3 mm to 3.7 mm while keeping the channel length constant at 72 µm, the key parameter of the channel geometry 𝑊/𝐿 ratio has been changed from 18.05 to 51.39. It has been reported that field effect mobility in OTFTs of pentacene fabricated over glass decreases as channel width increases at constant channel length.…”

mentioning

confidence: 99%

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Electrical Studies on Pentacene Thin Film Transistors with Different Channel Widths

Lohani

Gaur

Kumar

et al. 2010

Chinese Phys. Lett.

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In order to conduct electrical studies on organic thin film transistors, top-contact devices are fabricated by growing polycrystalline films of freshly synthesized pentacene over Si/SiO2 substrates with two different channel widths under identical conditions. Reasonable field effect mobilities in order of 10 −2 -10 −3 cm 2 V −1 s −1 are obtained in these devices. An elaborative electrical characterization of all the devices is undertaken to study the variance in output saturation current, field effect mobility, and leakage current with aging under ambient conditions. As compared to the devices with longer channel width, the devices with shorter channel width exhibit better electrical performance initially. However, the former devices sustain the moderate performance much longer than the latter ones.

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confidence: 86%

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confidence: 99%

Electrical Studies on Pentacene Thin Film Transistors with Different Channel Widths

Lohani

Gaur

Kumar

et al. 2010

Chinese Phys. Lett.

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“…The decreased μ FE implies that the μ FE of the BC pentacene-based OTFTs is affected by the carrier mobilities near the S/D electrodes and at the middle region of the channel, which is μ edge and μ middle , respectively (as shown in figure 4(a)). Because the pentacene grain size near the S/D electrodes is typically smaller than that in the middle region of the channel, the carrier mobility (μ edge ) near the S/D electrodes is lower than the mobility (μ middle ) in the middle region of the channel [16][17][18]. Kang et al proposed a formula, which is 1/μ total = 1/μ edge + 1/μ middle , to explain why the field effect mobility of OTFTs with a long channel is larger than that of OTFTs with a short channel [18].…”

Section: Resultsmentioning

confidence: 99%

Investigation on the electrical characteristics of a pentacene thin-film transistor and its reliability under positive drain bias stress

Fan

Chiu

Lin

et al. 2011

Semicond. Sci. Technol.

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This study systematically investigates the effects of pentacene deposition rates and channel lengths on the electrical characteristics of pentacene-based organic thin-film transistors (OTFTs), and the performance degradation of OTFTs under the positive drain bias stress. With a slower deposition rate of the pentacene channel layer, the larger grain size is formed, and it improves the performance of pentacene-based OTFTs. As the channel length decreases, the threshold voltage (V TH ) shifts toward the positive direction and the field-effect mobility (μ FE ) decreases, which are due to the drain-induced barrier lowering effect and the lower mobility in the active channel near the region of source/drain electrodes, respectively. In addition, we also propose a mechanism to present the channel length dependence on the field-effect mobility. Results also show that the pentacene-based OTFTs, which are under positive drain bias stress, exhibit greater performance degradation than those under negative drain bias stress. The greater performance degradation, the decreasing I ON and the larger V TH shift are due to the greater trap state density (N trap ) created in the bulk channel by the large lateral electrical field and the carriers injected into the gate insulator by the large vertical electrical field, respectively.

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“…If the gate dielectric capacitance and the field-effect mobility are fixed, one way to increase the drain current is by increasing the ratio of the channel width to channel length (W /L), i.e. to increase W and/or reduce L [11]. To date the main focus was on the reduction in L and the demonstration of digital circuits with high operation frequency [12], [13].…”

Section: Introductionmentioning

confidence: 99%

Organic Thin Film Transistors With Multi-Finger Contacts as Voltage Amplifiers

2018

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Geometric Effect of Channel on Device Performance in Pentacene Thin-Film Transistor

Cited by 8 publications

References 2 publications

Electrical Studies on Pentacene Thin Film Transistors with Different Channel Widths

Electrical Studies on Pentacene Thin Film Transistors with Different Channel Widths

Investigation on the electrical characteristics of a pentacene thin-film transistor and its reliability under positive drain bias stress

Organic Thin Film Transistors With Multi-Finger Contacts as Voltage Amplifiers

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