2003
DOI: 10.1002/jcc.10321
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Generalized born model with a simple smoothing function

Abstract: Based on recent developments in generalized Born (GB) theory that employ rapid volume integration schemes (M. S. Lee, F. R. Salabury, Jr., and C. L. Brooks III, J Chem Phys 2002, 116, 10606) we have recast the calculation of the self-electrostatic solvation energy to utilize a simple smoothing function at the dielectric boundary. The present GB model is formulated in this manner to provide consistency with the Poisson-Boltzmann (PB) theory previously developed to yield numerically stable electrostatic solvatio… Show more

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Cited by 651 publications
(796 citation statements)
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References 42 publications
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“…The flexible docking protocol variables changed from the default parameters were as follows: a 10.0-Å docking sphere was defined by searching the apo-VDR molecule for putative binding sites; the number of flexible docking residues allowed for structural refinement was set to 12; the top 5 hits were saved for each protein-ligand pair, and a simulated annealing step was performed. The Generalized Born with Molecular Volume method (23,24) was used to determine the ⌬G binding value (⌬G binding ϭ ⌬G holo-VDR Ϫ ⌬G apo-VDR Ϫ ⌬G ligand ), where the only default values changed were the cutoff distances, which were changed from 14, 12, and 10 Å, to 10, 8, and 6 Å, respectively. For a more detailed description of the computational techniques/protocols employed herein see the supplemental materials.…”
Section: Methodsmentioning
confidence: 99%
“…The flexible docking protocol variables changed from the default parameters were as follows: a 10.0-Å docking sphere was defined by searching the apo-VDR molecule for putative binding sites; the number of flexible docking residues allowed for structural refinement was set to 12; the top 5 hits were saved for each protein-ligand pair, and a simulated annealing step was performed. The Generalized Born with Molecular Volume method (23,24) was used to determine the ⌬G binding value (⌬G binding ϭ ⌬G holo-VDR Ϫ ⌬G apo-VDR Ϫ ⌬G ligand ), where the only default values changed were the cutoff distances, which were changed from 14, 12, and 10 Å, to 10, 8, and 6 Å, respectively. For a more detailed description of the computational techniques/protocols employed herein see the supplemental materials.…”
Section: Methodsmentioning
confidence: 99%
“…Each structure was first subjected to energy minimization for 1000 conjugate gradient steps. At the minimized state, the solvation energy was then calculated using the Generalized Born with a simple switching method (GBSW) 42,43 . Thus, the interaction energy between two dimeric structures was calculated by .…”
Section: Double-layered Annular Structuresmentioning
confidence: 99%
“…As such, we determined the structures in vacuum as well as in an implicit membrane model in which the average influence of the membrane (waters and lipids) is approximated by solvation free energy terms. As an implicit membrane model, we used a generalized Born model with a simple switching function (GBSW) [26,27] with 0.04 kcal/(mol·Å 2 ) for the surface tension coefficient, 23 Å for the hydrophobic thickness corresponding to a DMPC membrane, and 5 Å for a membrane smoothing length over which the hydrophobic region is gradually changed to the solvent region. The implicit planar membrane is perpendicular to the Z-axis and centered at Z = 0.…”
Section: Simulation Detailsmentioning
confidence: 99%