General aspects of barrier layers for very-large-scale integration applications II: Practice

Characterization of W-N Alloys Formed By Sputter Deposition

“…Metallic diffusion barriers are recognized to lead to beneficial improvements in the stability of contacts on semiconductors [1][2][3].…”

Chemical Vapor Deposition of Refractory Ternary Nitrides for Advanced Diffusion Barriers

“…There are a number of requirements for a diffusion barrier for silicon microelectronics, which have often been reviewed in the literature (1)(2)(3)(4)(5)(6). As device dimensions shrink, the demands on diffusion barrier performance and processing reliability increase.…”

Enhancing the reliability of n+–p junction diodes using plasma treated tantalum barrier film

“…The peak at $401 eV is ascribed to the nitrogen atoms or molecules present in interstitial sites. This kind of nitrogen is also detected in tungsten nitride film prepared by the reduction of WF 6 and N 2 gas [10]. As the N 2 plasma treatment time increased up to 30 min, the emission peak at $401 eV is dominated in the N 1s spectrum.…”

“…Many materials were used as a diffusion barrier in copper metallization technique. Refractory metals and their nitrides had been investigated for such applications [5][6][7][8][9][10][11][12]. Among them, tantalum and tantalum nitride have drawn the most attention owing to their high thermal stability and resistance to form compounds with copper.…”