Gated photodetector based on GaN/AlGaN heterostructure field effect transistor

Khan, M. Asif; Shur, M. S.; Chen, Q.; Kuznia, J. N.; Sun, C. J.

doi:10.1049/el:19950247

Cited by 86 publications

(49 citation statements)

References 5 publications

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“…Gated AlGaN/GaN-based heterostructure field effect transistors ͑HFET͒ used as a photodetector were first demonstrated by Khan et al 2 These devices exhibited a high maximum responsivity of 3 A/mW. In the following years photoconductors based on AlGaN/GaN heterostructures with responsivities up to 5 ϫ 10 6 A / mW have been demonstrated.…”

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confidence: 99%

High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

Martens

Schlegel

Vogt

et al. 2011

Applied Physics Letters

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We report on the optoelectronic properties of Al0.25Ga0.75N/GaN-based ultraviolet (UV) photodetectors for the application as a high current, high gain optical switch. Due to an internal gain mechanism combined with the high conductivity of the two-dimensional electron gas at the heterostructure interface, photocurrents in the milliampere-range were obtained with UV illumination. By employing a mesa structure design with meander geometry very low dark currents below 50 nA up to a bias voltage of 100 V were achieved. Optical switching with an on/off-current-ratio of five orders of magnitude was demonstrated. The response time was determined to be 6 ms and persistent photoconductivity was observed. The photodetector is visible-blind with a cut-off wavelength of 365 nm according to the band gap energy of the GaN absorption layer. A high responsivity with a maximum of 70 A/mW at 312 nm and 100 V bias voltage was demonstrated.

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confidence: 99%

High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

Martens

Schlegel

Vogt

et al. 2011

Applied Physics Letters

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“…1-5 Among them, AlGaN/GaN photodetector has superiority over others in the development of highspeed optoelectronic integrated circuit because it can be easily integrated with matured AlGaN/GaN high electron mobility transistor ͑HEMT͒ devices in one epitaxial step. 6,7 Although several research groups [8][9][10] have contributed to the development of AlGaN/GaN photoconductive detector based on HEMT gate structure, this detector has very limited application due to its large dark current, poor UV/visible ratio and slow response time.…”

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confidence: 99%

Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors

Huang

Chen

et al. 2010

Applied Physics Letters

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“…In particular, lasers, transistors, and photodetectors have been fabricated with this material. [11][12][13] These developments have fueled considerable interest in GaN.…”

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confidence: 99%