Gate-tunable kinetic inductance in proximitized nanowires
Lukas Johannes Splitthoff,
Arno Bargerbos,
Lukas Grünhaupt
et al.
Abstract:We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we have embedded the nanowire into a quarter-wave coplanar waveguide resonator and measured the resonance frequency of the circuit. We find that the resonance frequency can be changed via the gate voltage that controls the electron density of the proximitized semiconductor and thus the nanowire inductance. Applying Mattis-Bardeen theory, we extract the gate dependence of the normal state conductivity of… Show more
“…For neural networks based on the considered G-neurons, tunable elements with linear current-to-flux transformation (linear inductors) and memory properties are extremely important [ 50 – 51 ]. Tunability of the inductance l in Figure 1b allows for an in situ switching between operating modes directly on the chip.…”
The hardware implementation of signal microprocessors based on superconducting technologies seems relevant for a number of niche tasks where performance and energy efficiency are critically important. In this paper, we consider the basic elements for superconducting neural networks on radial basis functions. We examine the static and dynamic activation functions of the proposed neuron. Special attention is paid to tuning the activation functions to a Gaussian form with relatively large amplitude. For the practical implementation of the required tunability, we proposed and investigated heterostructures designed for the implementation of adjustable inductors that consist of superconducting, ferromagnetic, and normal layers.
“…For neural networks based on the considered G-neurons, tunable elements with linear current-to-flux transformation (linear inductors) and memory properties are extremely important [ 50 – 51 ]. Tunability of the inductance l in Figure 1b allows for an in situ switching between operating modes directly on the chip.…”
The hardware implementation of signal microprocessors based on superconducting technologies seems relevant for a number of niche tasks where performance and energy efficiency are critically important. In this paper, we consider the basic elements for superconducting neural networks on radial basis functions. We examine the static and dynamic activation functions of the proposed neuron. Special attention is paid to tuning the activation functions to a Gaussian form with relatively large amplitude. For the practical implementation of the required tunability, we proposed and investigated heterostructures designed for the implementation of adjustable inductors that consist of superconducting, ferromagnetic, and normal layers.
“…At present, the last type of the above-mentioned spin valves is the least studied among the variety of possible technical solutions. In contrast to the other types of tunable inductors [17,46,47], it does not require the current suppression of superconductivity and can be considered a tunable linear element. The typical configuration of such a device is shown in Figure 1.…”
We have studied the proximity effect in an SF1S1F2s superconducting spin valve consisting of a massive superconducting electrode (S) and a multilayer structure formed by thin ferromagnetic (F1,2) and superconducting (S1, s) layers. Within the framework of the Usadel equations, we have shown that changing the mutual orientation of the magnetization vectors of the F1,2 layers from parallel to antiparallel serves to trigger superconductivity in the outer thin s-film. We studied the changes in the pair potential in the outer s-film and found the regions of parameters with a significant spin-valve effect. The strongest effect occurs in the region of parameters where the pair-potential sign is changed in the parallel state. This feature reveals new ways to design devices with highly tunable inductance and critical current.
“…1(g)]. The resulting phonons of energy E ≤ 2∆ trap can no longer excite quasiparticles in the qubit structures, for which the superconducting gaps of the islands ∆ NbTiN ≥ 1500 µeV and of the nanowires ∆ nw = 270 µeV are larger than that of the traps ∆ trap = 180 µeV [30,[43][44][45].…”
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