Gate‐Coupling‐Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions

Huang, Wenhao; Wang, Feng; Yin, Lei; Cheng, Ruiqing; Wang, Zhenxing; Sendeku, Marshet Getaye; Wang, Junjun; Li, Ningning; Yao, Yuyu; He, Jun

doi:10.1002/adma.201908040

Cited by 98 publications

(95 citation statements)

References 53 publications

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“…One electrode injects spinning current into the spacing layer, and another electrode detects the current signals. [ 162,206,211,255,280,281 ] As illustrated in Figure 15c, [ 277 ] depending on the applied field and the state‐of‐art polarization state, the switches between parallel and antiparallel alignment for the ferromagnetic layers could have occurred, which corresponds to the low resistance ( R P ) and the high resistance ( R AP ). At the low resistance situation, denoted as the Boolean 1 state, a spin‐polarized current flows from the injector to the detector, preserving the injected spin.…”

Section: Bn‐based Spin Valves and Magnetic Tunneling Junctionsmentioning

confidence: 99%

“…The magnetoresistance was determined by the spin filtering effect at the medium/ferroelectric interfaces. [ 162,281 ] Moreover, the lattice constants of h‐BN almost match with Ni and Co. [ 224,225,251 ] For the device design, the ideal interface and good crystalline are significant factors of the magnetic tunnel junctions.…”

Section: Bn‐based Spin Valves and Magnetic Tunneling Junctionsmentioning

confidence: 99%

“…By using an asymmetric structure of metallic electrodes and the electrically insulating h‐BN layer, gate tunable rectifying characteristics was proven to be programmable with a rectification ratio larger than 10 5 after applying a suitable gate bias. [ 309 ] High quality BN layers can be used to tunnel electrons, and even suppress band bending at the interface, limiting Fermi level pinning. The clean and sharp interfaces of BN connecting with ferroelectric crystals and TMDs enable extremely low currents during programming and erasing operation.…”

Section: Challenges and Prospectsmentioning

confidence: 99%

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Building Functional Memories and Logic Circuits with 2D Boron Nitride

Liu

Chen

Wang

et al. 2020

Adv Funct Materials

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The fast development of synthesis routes and preparation technology of 2D materials has motivated a rapid growth in the micro‐ and nanoelectronic memory devices, which gives rise to the breakthroughs in the semiconductor research area. Hexagon boron nitride (h‐BN) with excellent chemical, mechanical, and optical properties has been proven to have potential in overcoming the scaling limit to nanometer, and even sub‐nanometer lengths to replace the use of thick and stiff blocking dielectrics in two‐terminal or three‐terminal devices. The use of atomically thin h‐BN or h‐BN van der Waals heterostructures (vdWhs) can improve the reliability, capability, and functionality of memory devices. This is an encouraging strategy toward high‐density on‐chip integrated circuits, which has recently earned considerable interest. While the research in h‐BN material properties and characterization is comprehensively verified, specified mechanisms of resistive switching have not been analyzed in‐depth. Moreover, recent concern about novel structure design and expanding applications in electronics, optoelectronics, and spintronics has arisen. In this review, recent progress in h‐BN memories with volatile or nonvolatile properties is presented, expanding the memories to functional applications, and further challenges of the development of h‐BN‐based memories and logic circuits are discussed.

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Section: Bn‐based Spin Valves and Magnetic Tunneling Junctionsmentioning

confidence: 99%

Section: Bn‐based Spin Valves and Magnetic Tunneling Junctionsmentioning

confidence: 99%

Section: Challenges and Prospectsmentioning

confidence: 99%

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Building Functional Memories and Logic Circuits with 2D Boron Nitride

Liu

Chen

Wang

et al. 2020

Adv Funct Materials

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“…Inorganic CuInP 2 S 6 (CIPS) down to ≈4 nm has recently been demonstrated to be compatible with van der Waals (vdW) heterostructure as room‐temperature ferroelectric insulator for 2D FeFETs. [ 17–19 ] Nevertheless, its relatively low Curie point of 315 K ( T c , phase transition from ferroelectric to paraelectric) hinders high temperature ferroelectric applications. Same issue is also found for some of the organic polymer ferroelectrics.…”

Section: Figurementioning

confidence: 99%

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

et al. 2020

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control, which enhances the immunity to short channel effects. [1-5] Ferroelectric field-effect transistors (FeFETs) with a 2D channel and ferroelectric insulator take advantage of the large polarization charge density and high dielectric constant have recently attracted great attention in nonvolatile memory and low-power logic applications. [6-12] However, direct deposition of conventional ferroelectric insulators, such as hafnium or zirconium oxide (HfO 2 , ZrO 2) onto the 2D channel is challenging due to the absence of dangling bonds at the 2D semiconductor surface. Meanwhile, the manifest demonstration of ferroelectricity is critical to the thickness and doping of HfO 2 or ZrO 2 film. Transistors with polymer ferroelectric (e.g., poly[(vinylidene fluoride)-co-trifluoroethylene)] [P(VDF-TrFE)]) gated 2D channel have been thoroughly explored due to the facile device preparation. [13-16] However, the low polarizing performance and poor reliability of polymer ferroelectrics compared with inorganic ferroelectrics limit their applications in real device applications. Inorganic CuInP 2 S 6 (CIPS) down to ≈4 nm has recently been demonstrated to be compatible with van der Waals (vdW) heterostructure as room-temperature ferroelectric insulator for 2D FeFETs. [17-19] Nevertheless, its relatively low Curie point of 315 K (T c , phase transition from ferroelectric to paraelectric) hinders high temperature ferroelectric applications. Same issue is also found for some of the organic polymer ferroelectrics. Aurivillius bismuth layer-structured ferroelectric (BLSF) Na 0.5 Bi 4.5 Ti 4 O 15 (NBIT) has received significant attention in virtue of their high Curie temperature of ≈650 °C, high resistivity, low leakage current, low dielectric loss, low aging rate, and excellent thermal stability, which are attractive for hightemperature piezoelectric devices and ferroelectric nonvolatile random-access memory storage devices. [20-25] A high dielectric constant of 140-180 at room temperature has been reported in the NBIT synthesized by solid-state reaction process, and it is stable over an ultrawide temperature range from room temperature to ≈400 °C. [26] However, NBIT prepared by traditional solid-state reaction methods inevitably suffers from these issues, such as significant impurity phase, irregular flake shape, rough surface. [27] The nanoscale NBIT flakes synthesized by wet chemical methods have the problem of severe agglomeration Ferroelectric field-effect transistors (FeFETs) have recently attracted enormous attention owing to their applications in nonvolatile memories and low-power logic electronics. However, the current mainstream thin-film-based ferroelectrics lack good compatibility with the emergent 2D van der Waals (vdW) heterostructures. In this work, the synthesis of thin ferroelectric Na 0.5 Bi 4.5 Ti 4 O 15 (NBIT) flakes by a molten-salt method is reported. With a dry-transferred NBIT flake serving as the top-gate dielectric, dual-gate molybdenum disulfide (MoS 2) FeFETs are fabricated in a full vdW stacking structur...

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“…Recently CuInP 2 S 6 (CIPS), a typical room-temperature van der Waals (vdW) layered ferroelectric crystal 19,20,21 , has attracted intensive attention due to its unexpected features including giant negative piezoelectricity 22 , tunable quadruple-well ferroelectric nature 23 , negative capacitance characteristic 24 and the interplay between ferroelectricity and ionic conductivity 25,26,27 . These unique characteristics not only bring new insights into the fundamental research 28,29 , but also provide new opportunities for diverse applications of layered ferroelectrics 30,31 . However, when electrically switching ferroelectric domains, the polar structure and ferroelectricity of CIPS can be readily damaged 32,33 due to its high ionic conductivity 34,35 .…”

Section: Introductionmentioning

confidence: 99%

Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric

et al. 2020

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Solid-liquid interface is a key concept of many research fields, enabling numerous physical phenomena and practical applications. For example, electrode-electrolyte interfaces with electric double layers have been widely used in energy storage and regulating physical properties of functional materials. Creating a specific interface allows emergent functionalities and effects. Here, we show the artificial control of ferroelectric-liquid interfacial structures to switch polarization states reversibly in a van der Waals layered ferroelectric CuInP2S6. We discover that upward and downward polarization states can be induced by spontaneous physical adsorption of anions [DDBS] and cations [DEME], respectively, at the ferroelectric-liquid interface. This distinctive approach circumvents the structural damage of CIPS caused by Cu-ion conductivity during electrical switching process. Moreover, the polarized state features super-long retention time (> 1 year). The interplay between ferroelectric dipoles and adsorbed organic ions has been studied systematically by comparative experiments and first-principles calculations. Such ion adsorption-induced reversible polarization switching in a van der Waals ferroelectric enriches the functionalities of solid-liquid interfaces, offering opportunities for liquid-controlled two-dimensional ferroelectric-based devices.

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Gate‐Coupling‐Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions

Cited by 98 publications

References 53 publications

Building Functional Memories and Logic Circuits with 2D Boron Nitride

Building Functional Memories and Logic Circuits with 2D Boron Nitride

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric

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Gate‐Coupling‐Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions

Cited by 98 publications

References 53 publications

Building Functional Memories and Logic Circuits with 2D Boron Nitride

Building Functional Memories and Logic Circuits with 2D Boron Nitride

Charge–Ferroelectric Transition in Ultrathin Na0.5Bi4.5Ti4O15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric

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Product

Resources

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Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor