2004
DOI: 10.1063/1.1779959
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GaSe crystals for broadband terahertz wave detection

Abstract: We report experimental results of using GaSe crystals for the broadband detection of terahertz (THz) waves from 100GHzto30THz. In comparison, the THz wave field amplitude measured with a GaSe crystal exceeds that detected by a ZnTe crystal with a comparable detection bandwidth. The central frequency is tunable by varying the angle between the incident THz radiation and the crystal surface normal.

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Cited by 138 publications
(62 citation statements)
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“…The key parameters determined from THz data using the Drude model are: the plasma frequency p = 2.6± 0.2 THz, the average momentum relaxation time ͗ ͘ = 56± 2 fs, and the mobility =89 cm 2 Gallium selenide ͑GaSe͒ is a promising semiconductor crystal for nonlinear optics and THz generation with an extremely large bandwidth up to 41 THz. 1,2 GaSe is a negative uniaxial layered semiconductor with hexagonal structure of 62 m point group with a direct band gap E g d = 2.202 eV and an indirect gap E g i = 1.995 eV at T = 300 K. The longitudinal and transverse optical phonons are located at 254 and 213 cm −1 , respectively.…”
mentioning
confidence: 99%
“…The key parameters determined from THz data using the Drude model are: the plasma frequency p = 2.6± 0.2 THz, the average momentum relaxation time ͗ ͘ = 56± 2 fs, and the mobility =89 cm 2 Gallium selenide ͑GaSe͒ is a promising semiconductor crystal for nonlinear optics and THz generation with an extremely large bandwidth up to 41 THz. 1,2 GaSe is a negative uniaxial layered semiconductor with hexagonal structure of 62 m point group with a direct band gap E g d = 2.202 eV and an indirect gap E g i = 1.995 eV at T = 300 K. The longitudinal and transverse optical phonons are located at 254 and 213 cm −1 , respectively.…”
mentioning
confidence: 99%
“…The typical size of a GaSe:In sample is 7.0ϫ 5.0ϫ 0.5 mm 3 . For DLTS measurements, samples were cleaned in acetone using an ultrasonic bath.…”
Section: Methodsmentioning
confidence: 99%
“…Far-infrared electric transients [12,13] can be characterized by photoconductive switching [14]. Electro-optic sampling in free space [15][16][17] allows field-resolved detection at high sensitivity in the entire far-and mid-infrared spectral range [18,19]. Direct studies of the complexvalued susceptibilities of materials and the elementary dynamics in condensed matter may be performed with these methods [20,21].…”
mentioning
confidence: 99%