MRS Proc. 2001 DOI: 10.1557/proc-692-h.9.27.1 View full text
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Hajime Asahi, Hwe-Jae Lee, Akiko Mizobata, Kenta Konishi, Osamu Maeda, Kumiko Asami

Abstract: ABSTRACTTlInGaAs/InP double-hetero (DH) structures were grown on (100) InP substrates by gas source MBE. The photoluminescence (PL) peak energy variation with temperature decreased with increasing TI composition. For the DH with a TI composition of 13%, the PL peak energy varied only slightly with temperature (-0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). TlInGaAs/I…

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