GaN Takes the Lead

Campbell, Carol; Balistreri, A.; Kao, Ming-Yih; Dumka, D.C.; Hitt, John C.

doi:10.1109/mmm.2012.2205829

Cited by 58 publications

(23 citation statements)

References 22 publications

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“…The structural parameters are optimized and provided to people for a better device fabrication. However, the actual operating conditions including the operation temperature, switching process, and matching circuit should be also considered seriously for practical applications [26][27][28][29][30]. It is noteworthy that the optimal device structures in this work are based on the dc characteristics.…”

Section: Performances Of the Optimized Bcbl-vfetmentioning

confidence: 99%

Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Huang

Sun

et al. 2019

Electronics

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A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvement of high breakdown voltage (BV) characteristics. In this work, a trenched-gate scheme is employed to realize the normally off VFET. Meanwhile, an additional back current blocking layer (BCBL) is proposed and inserted into the GaN normally off VFET to improve the device performance. The electrical characteristics of the proposed device (called BCBL-VFET) are investigated systematically and the structural parameters are optimized through theoretical calculations and TCAD simulations. We demonstrate that the BCBL-VFET exhibits a normally off operation with a large positive threshold voltage of 3.5 V and an obviously increased BV of 1800 V owing to the uniform electric field distribution achieved around the gate region. However, the device only shows a small degradation of on-resistance (RON). The proposed scheme provides a useful reference for engineers in device fabrication work and will be promising for the applications of power electronics.

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Section: Performances Of the Optimized Bcbl-vfetmentioning

confidence: 99%

Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Huang

Sun

et al. 2019

Electronics

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“…The aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) High Electron-Mobility Transistor (HEMT) has been attracting a wide and growing interest since its inception in the early 1990s [1][2][3][4][5][6][7][8][9][10]. This great interest stems from the fact that such a wide-band gap semiconductor device is well suited for high-power applications at microwave and millimeter-wave frequencies, making it eligible for a plethora of applications ranging from military to commercial uses [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. In comparison to gallium-arsenide (GaAs), which has traditionally been widely used for high-frequency applications, GaN has superior material characteristics, like higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Empowering GaN HEMT models: The gateway for power amplifier design

Crupi

Vadalà

Colantonio

et al. 2015

Int J Numerical Modelling

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The purpose of this invited paper is to give readers a comprehensive and critical overview on how to extract equivalent-circuit models for GaN HEMTs, which are the preferred devices for high-power high-frequency applications. This overview is meant to provide a practical modeling know-how for this advanced type of transistor, in order to support its development for improving device technology and circuit design. With the aim to broaden knowledge to empower models, experimental results are presented as illustrative examples of the most crucial challenges faced by the microwave engineers in modeling high-power GaN HEMTs. All the relevant aspects are covered, going from linear (also noise) to nonlinear models. The analysis is mainly focused on the modeling of distinctive peculiarities of GaN HEMTs. Particular attention is paid to study the importance of accurately modeling the kink effect in the output reflection coefficient, because of the relatively high transconductance, the peak in the magnitude of the short circuit current-gain, because of the relatively large intrinsic capacitances, and the low-frequency dispersion, because of trapping and thermal effects. Furthermore, to emphasize the key role of accurate device models for a successful circuit design, a practical example of power amplifier is discussed. Copyright © 2015 John Wiley & Sons, Ltd

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“…There are potential benefits to implementing RF switches [1], mixers [2], high power amplifiers (HPAs) [3] and low noise amplifiers (LNAs) [4] in GaN. This is due to the superior material properties of GaN when compared with other semiconductor technologies such as gallium arsenide (GaAs).…”

Section: Introductionmentioning

confidence: 99%

European gallium nitride capability

Martin

2015

2015 IEEE Radar Conference (RadarCon)

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Gallium nitride (GaN) provides clear advantages over other technologies such as gallium arsenide (GaAs) for high power solid state radio frequency (RF) applications. However Europe is currently reliant on other countries, in particular the US, for GaN components and systems. This paper summarises recent research into GaN within Europe and the progress towards establishing an independent European supply chain.

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GaN Takes the Lead

Cited by 58 publications

References 22 publications

Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Empowering GaN HEMT models: The gateway for power amplifier design

European gallium nitride capability

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