GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

Chen, Chang-Hsiao; Chang, Shoou‐Jinn; Su, Yan Kuin; Chi, Gou–Chung; Chi, J.Y.; Chang, Chin An; Sheu, Jinn-Kong; Chen, J.F.

doi:10.1109/68.935824

Cited by 144 publications

(73 citation statements)

References 11 publications

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“…GaN have many advantages, such as the ideal spectral selectivity with wide direct band gaps, a high breakdown field, a high thermal stability, the radiation hardness, and an expected high responsiveness. Silicon carbide has emerged as the most mature wide band gap (2.0 eV ≤ Eg ≤ 7.0 eV) semiconductor since the release of commercial 6H-SiC bulk substrates in 1991 and 4H-SiC substrates in 1994 [8]. It is a material long known to have a potential sufficient for high-temperature, high-power, high-frequency, and radiation hardened applications.…”

Section: Resultsmentioning

confidence: 99%

Comparative Tests of Temperature Effects on the Performance of Gan and Sic Photodiodes

Ćwirko

Mikołajczyk

2015

Metrology and Measurement Systems

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The paper presents a study of the performance of some selected UV detectors. Unlike many similar works, the obtained data refer to commercial photodiodes (not only to detector materials). The main task of the research was to determine the influence of the operating temperature and annealing on the detector spectral responsiveness. A comparison of the results obtained for the photodiodes made of GaN and SiC was also performed. Although both kinds of detectors can work at high temperatures for a long time, some modification of their properties was observed. However, for GaN and SiC photodiodes, this modification has a substantially different nature. It is very important for some applications, e.g. fire alarms and a military equipment.

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Section: Resultsmentioning

confidence: 99%

Comparative Tests of Temperature Effects on the Performance of Gan and Sic Photodiodes

Ćwirko

Mikołajczyk

2015

Metrology and Measurement Systems

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“…So, GaN-based detector is a natural solar-blind UV detector used for body detecting and tracing, space UV communication and ozone monitoring. Compared with other structure detector, the performance of GaN-based detectors with p-i-n [1,2] and MSM [3,4] structures is impressive, such as low dark current and high spectral responsivity. Unfortunately, most research work in this area mainly focuses on decreasing the dark current [5,6] and enhancing the spectral responsivity [7,8] by improving and optimizing the fabrication process of devices, and only a few studies investigate the physical mechanism of the device performance improvement.…”

Section: Introductionmentioning

confidence: 98%

A novel model of photo-carrier screening effect on the GaN-based p-i-n ultraviolet detector

Gao

Liu

Kuang

et al. 2010

Sci. China Phys. Mech. Astron.

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The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet (UV) detector is calculated by solving the photo-carrier continuity equation, and the photo-carrier screening electric field is calculated according to Poisson's equation. Using the numerical calculation method, a novel model of photo-carrier screening effect is presented. Then the influence of photo-carrier screening effect on the distribution of photo-carrier density in the depletion region of p-i-n detector is discussed. The influence of incident power, bias voltage and carrier life time on the photo-carrier screening effect is also analyzed. It is concluded that the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is non-monotone, the maximum of carrier drift velocity and the minimum of response time can be realized by adjusting the applied voltage. Besides, the incident light duration has strong impact on the photo-carrier screening effect.GaN, p-i-n, ultraviolet detector, photo-carrier screening effect PACS: 78.66.Fd, 85.60.Bt, 85.60.Gz

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“…Traditional photoelectric detectors include photodiodes (Melchior 1972(Melchior , 1977, phototransistors (Jayson and Knight 1976;DeLaMoneda et al 1971;Forbes et al 1976), avalanche photodiodes (Johnson 1965;Carrano 2000), PiN diodes (Lee and Sze 1970;Singh et al 2002), and metal-semiconductor-metal photodetectors (Chen et al 2001). Although different in structures and performances, all the traditional photoelectric detectors have a common characteristic: they can generate only a constant electric signal when the illuminance is constant, implying that the circuitry followed the photoelectric detectors must deal with DC signals.…”

Section: Introductionmentioning

confidence: 99%

A novel photoelectric MOSFET with AC output under constant illumination

2009

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Traditional photoelectric devices can generate only DC electric signals under constant illumination. In this work, a novel photoelectric metal-oxide-semiconductor fieldeffect transistor (MOSFET) with AC output under constant illumination is introduced, in which the channel current is modulated by the gate voltage. This virtue can greatly simplify the signal processing circuitry. This photoelectric MOSFET has been successfully fabricated using a standard 0.8 micron MOSFET process.

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GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

Cited by 144 publications

References 11 publications

Comparative Tests of Temperature Effects on the Performance of Gan and Sic Photodiodes

Comparative Tests of Temperature Effects on the Performance of Gan and Sic Photodiodes

A novel model of photo-carrier screening effect on the GaN-based p-i-n ultraviolet detector

A novel photoelectric MOSFET with AC output under constant illumination

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