volume 135, issue 3, P282-284 2006
DOI: 10.1016/j.mseb.2006.08.020
View full text
Sign up to set email alerts

Abstract: We report on a GaN metal-oxide-semiconductor field-effect-transistor (MOSFET) using atomic-layer-deposited (ALD) Al 2 O 3 as the gate dielectric. Compared to a GaN metal-semiconductor field-effect-transistor (MESFET) of similar design, the MOSFET exhibits several orders of magnitude lower gate leakage and near three times higher channel current. This implies that the ALD Al 2 O 3 /GaN interface is of high quality and the ALD Al 2 O 3 /GaN MOSFET is of interest and potential for high-power RF and digital appli…

Expand abstract