The present study reports, for the first time, the highly efficient formation of barrier-type anodic films, with flat and parallel metal/film and film/electrolyte interfaces, on magnesium in ethylene glycol electrolytes containing ammonium fluoride and water. The anodizing voltage increases linearly with time during galvanostatic anodizing at 10 A m -2 up to 350 V.The anodic film formed to 200 V is 247 nm thick, containing a crystalline MgF 2 phase.Analysis by Rutherford backscattering spectroscopy discloses the film composition of MgF 1.8 O 0.1 and Pilling-Bedworth ratio (PBR) of 1.67. The PBR value greater than unity and the formation of chemically stable fluoride-based films may contribute to the film growth at high current efficiency.