Gallium-Telluride-Based Composite as Promising Lithium Storage Material

Abstract

Various applications of gallium telluride have been investigated, such as in optoelectronic devices, radiation detectors, solar cells, and semiconductors, owing to its unique electronic, mechanical, and structural properties. Among the various forms of gallium telluride (e.g., GaTe, Ga3Te4, Ga2Te3, and Ga2Te5), we propose a gallium (III) telluride (Ga2Te3)-based composite (Ga2Te3-TiO2-C) as a prospective anode for Li-ion batteries (LIBs). The lithiation/delithiation phase change mechanism of Ga2Te3 was examined. The existence of the TiO2-C hybrid buffering matrix improved the electrical conductivity as well as mechanical integrity of the composite anode for LIBs. Furthermore, the impact of the C concentration on the performance of Ga2Te3-TiO2-C was comprehensively studied through cyclic voltammetry, differential capacity analysis, and electrochemical impedance spectroscopy. The Ga2Te3-TiO2-C electrode showed high rate capability (capacity retention of 96% at 10 A g−1 relative to 0.1 A g−1) as well as high reversible specific capacity (769 mAh g−1 after 300 cycles at 100 mA g−1). The capacity of Ga2Te3-TiO2-C was enhanced by the synergistic interaction of TiO2 and amorphous C. It thereby outperformed the majority of the most recent Ga-based LIB electrodes. Thus, Ga2Te3-TiO2-C can be thought of as a prospective anode for LIBs in the future.

Recovery technologies for indium, gallium, and germanium from end-of-life products (electronic waste) – A review

“…Gallium compounds (GaTex, AsN, GaAs) are used in various batteries, such as secondary lithium batteries, nuclear batteries, and solar batteries (Hoang Huy et al, 2022). For example, gallium can improve the specific capacity, efficiency, cycling, and overcharge resistance of lithium batteries (Nishida et al, 1997;Patil et al, 2015).…”

Decoding the Atomic Structure of Ga2Te5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations

“…In other words, a controlled crystallization of the amorphous Ga2Te5 PLD film yields a high-quality, stable tetragonal crystal promising for photovoltaic, thermoelectric, en- Even more surprisingly, gallium pentatelluride appears to be perfectly stable after 15 months at room temperature, Figure S1 (Supplementary Information), in contrast to bulk Ga 2 Te 5 , transforming into cubic Ga 2 Te 3 and trigonal tellurium within several weeks [30]. In other words, a controlled crystallization of the amorphous Ga 2 Te 5 PLD film yields a highquality, stable tetragonal crystal promising for photovoltaic, thermoelectric, energy storage, and memory applications [33][34][35][36][37]. On the contrary, the slow cooling or fast quenching of molten Ga 2 Te 5 gives a polycrystalline mixture of cubic gallium sesquitelluride and trigonal Te, Figure S1, fully consistent with the Ga-Te phase diagram, Figure 1d.…”

“…Consequently, the relationship between the amorphous material—obtained by the near instantaneous freezing of the highly excited fragments, particles, liquid globules, etc., existing in the laser-induced plasma (plume)—and a metastable crystal is expected to be complex, leaving room for various intermediate configurations and states. Deep insights into the atomic structure and associated electronic, optical, thermal, and other properties are a key for the rational design of next-generation PCMs and new functional materials for use in photovoltaic, thermoelectric, DNA sensing, and energy storage applications [ 33 , 34 , 35 , 36 , 37 ].…”

Морфология поверхности и структурные свойства кристаллов GaTe после ионно-плазменной обработки

“…Теллурид галлия относится к слоистым полупроводникам [1], легко формируется в виде 2D структур [2][3][4][5][6], имеет энергетическую диаграмму с прямой зоной [7][8][9], может существовать в различных структурных модификациях [10][11][12][13], имеет ярко выраженную анизотропию свойств [8,[14][15][16]. Эти и другие свойства позволяют применять кристаллы, пленки и 2D структуры (nanosheets, nanoflakes) GaTe при разработке фотодетекторов и солнечных элементов [17][18], транзисторов и фототранзисторов [19][20][21], элементов электроники и фотоники [22][23][24], устройств фотокатализа [25,26], литий-ионных элементов [27] и т. д. В настоящее время наряду с активным изучением низкоразмерных 2D систем проводятся комплексные исследования по формированию и использованию 1D объектов на основе теллурида галлия. Первые результаты по созданию нанопроволок GaTe были описаны в работе [28].…”