Gain and carrier lifetime measurements in AlGaAs single quantum well lasers

Dutta, Niloy K.; Hartman, R. L.; Tsang, W. T.

doi:10.1109/jqe.1983.1072033

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The Refractive-index Distribution1

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1986

1997

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Cited by 52 publications

(2 citation statements)

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“…where e is the electron charge, d 5 is the thickness of the QW active layer and τ is the carrier lifetime. For the purpose of this work it will be assumed that τ = 1.5 ns which is the mean value between 1 ns [18] and 2 ns measured experimentally [19].…”

Section: The Refractive-index Distributionmentioning

confidence: 99%

A theory of broad-area semiconductor lasers with modal reflectors

Szymański

Kubica

Szczepanski

et al. 1997

J. Phys. D: Appl. Phys.

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This paper provides a theoretical analysis of guided lateral modes in broad-area (BA) semiconductor lasers with modal reflectors formed by patterning the reflectivity of the front facet. The analysis has been performed by using the model based on the effective-index method and the concept of the effective facet reflectivity. The numerical results include mode threshold conditions and far-field patterns of the lasing modes for various reflector configurations.

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Section: The Refractive-index Distributionmentioning

confidence: 99%

A theory of broad-area semiconductor lasers with modal reflectors

Szymański

Kubica

Szczepanski

et al. 1997

J. Phys. D: Appl. Phys.

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show abstract

“…(The full curve is for p = 0 and the broken curve for p = kT.) against CY and b, and figures 7 and 8 show variation with quasi-Fermi level for (E, p) = (3,5) and(3, 10).…”

mentioning

confidence: 99%