GaAsN interband transitions involving localized and extended states probed by resonant Raman scattering and spectroscopic ellipsometry

Abstract

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Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN and GaInAsN grown by molecular beam epitaxy

“…1, we determined the relationship as o ¼ 468.3+1.91 [N] based on the linear fit to the data. This is consistent with but extending the work of Prokofyeva et al [14] and Wagner et al [15] to [N] of about $6.5%, while their were limited to 3.3%. The root mean square (RMS) error calculated from the difference between the Raman estimation and SIMS measurement is 0.2% suggesting usefulness for estimating [N].…”

Influence of lattice‐matching on structural properties of GaInNAs epitaxial films grown on GaAs

“…Figure 4 shows Raman scattering spectra of as-grown GaInNAs films obtained for three differnt latticematching conditions with fixed nitrogen composition (2 at%). The nitrogen-related local-vibrational mode at 470 cm -1 , which is attributed to Ga-N like LO 2 mode [3], was observed for all samples. A clear shoulder peak at 490 cm -1 , which has been understood as stress-relaxation mode [1], was observed only on the lattice-matched sample.…”

“…The alloy composition of In was firstly determined in GaInAs and then N composition in GaInNAs was determined with keeping In composition from the separation of the X-ray diffraction peaks between the layer and substrate. Raman scattering measurements were performed at room temperature with backscattering arrangement using a He-Ne laser (632.8 nm), which enhances N-related local vibrational modes [3].…”

Ellipsometry and Its Applications in Stoichiometry

“…Wagner et al applied SE together with resonant Raman scattering to study the GaAs 1-x N x (0<x<0.033) interband transitions involving localized and extended states. The pseudodielectric function spectra of GaAs 1-x N x (0<x<0.033) obtained by SE showed a high-energy shift and broadening of the E 1 and E 1 + 1 interband transitions with increasing N content [101]. Figure 13 shows the composition-dependence of the E 1 and E 1 + 1 band-gap energies, which were determined by the minima in d 2 <ε 2 >/dE 2 .…”