GaAs detectors irradiated by low doses of electrons

Šagátová, Andrea; Затько, Б.; Pavlovič, Márius; Sedlačková, Katarína; Hybler, Peter; Dubecký, F.; Nečas, Vladimı́r

doi:10.1088/1748-0221/9/04/c04036

Cited by 14 publications

(11 citation statements)

References 14 publications

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“…Employing an XRF spectrometer in such a submarine for in situ characterisation would eliminate the need to return collected samples back to the surface of Europa or bring them inside the submarine. The requirement of radiation hard electronics that can survive the intense radiation environment of Jupiter also favours GaAs photodiodes; researchers have demonstrated a high radiation resistance of GaAs detectors to γ‐rays, fast neutrons, and high energy electrons …”

Section: Extra‐terrestrial Applicationsmentioning

confidence: 99%

Prototype GaAs X‐ray detector and preamplifier electronics for a deep seabed mineral XRF spectrometer

Lioliou

Barnett

2017

X-Ray Spectrometry

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Work towards developing a prototype GaAs based X-ray fluorescence spectrometer focusing on the detector-preamplifier system for in situ characterisation of deep seabed minerals is presented. Such an instrument could be useful for marine geology and provide insight into hydrothermal processes. It would also be beneficial for deep sea mining applications. The GaAs photodiode was electrically characterised at 4°C (ambient seawater temperature) and 33°C. A system energy resolution (full width at half maximum) at 5.9 keV of 580 eV at 4°C, limited by the dielectric noise, broadening to 680 eV at 33°C, was recorded. The spectral performance of the system was characterised across the energy range 4.95 keV to 21.17 keV, at 33°C, using high-purity X-ray fluorescence calibration samples excited by a Mo target X-ray tube. The charge output from the system was found to be linear with incident photon energy. The energy resolution was found to broaden from 695 eV at 4.95 keV to 735 eV at 21.17 keV, attributed to the increasing Fano noise with energy. The same X-ray tube was used to fluoresce an unprepared manganese nodule (revealing the presence of Mn, Fe, Ni, Cu, Zn, Pb, Sr, and Mo) and a black smoker hydrothermal vent sample (containing Fe, Co, Ni, Cu, Zn, Pb, and Mo). Such a spectrometer may also find use in future space missions to study the hydrothermal vents that are believed to exist in the oceans of Jupiter's moon Europa. | INTRODUCTIONIn recent years, there has been renewed interest in deep ocean exploration for economic as well as scientific reasons. Economic interest in the seabed is motivated by the availability of valuable minerals in the deep ocean.[1] At present, elemental characterisation of seabed mineral deposits requires samples to be retrieved and transported to either a surface vessel or to shore.[2]The development of instrumentation for in situ elemental analysis (e.g., X-ray fluorescence spectrometry, XRF) in the ocean would revolutionise scientifically motivated and economically motivated surveying and prospecting. A remotely operated vehicle equipped with an XRF spectrometer or neutron activation analysis package has been proposed for this application.[3] For mining, in situ elemental analysis technology may also be used throughout the mine site's life to continually monitor the collection of materials and to ensure that any tailings returned to the seabed are of appropriate composition to minimise impact on the surrounding ecosystem. -----------------------------------This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Extra‐terrestrial Applicationsmentioning

confidence: 99%

Prototype GaAs X‐ray detector and preamplifier electronics for a deep seabed mineral XRF spectrometer

Lioliou

Barnett

2017

X-Ray Spectrometry

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“…This interest largely stems from the fact that the most important native defect in SI GaAs, the EL2 defect, is related to the arsenic anti-site. Recently, the influence of 5 MeV electron low dose irradiation on the spectrometric properties of a SI GaAs Schottky barrier detectors was reported [9]. However, studies of galvanomagnetic parameters of electron irradiated SI GaAs are rare.…”

Section: Introductionmentioning

confidence: 99%

The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

et al. 2016

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In this work we fabricated detectors based on semi-insulating GaAs and studied their electrical properties (current-voltage characteristics, galvanomagnetic measurements) after irradiation with 5 MeV electrons from a linear accelerator up to a dose of 104 kGy. A series of detectors were prepared using Ti/Pt/Au Schottky contact with 1 mm diameter. The thickness of the base material was about 230 µm. A whole area Ni/AuGe/Au ohmic contact was evaporated on the back side. For galvanomagnetic measurements we used three samples from the same wafer. All samples were irradiated by a pulse beam of 5 MeV electrons using the linear accelerator in 11 steps, where the accumulative dose increased from 1 kGy up to 104 kGy. Also different dose rates (20, 40 and 80 kGy/h) were applied to the samples. After each irradiation step we performed electrical measurement of each sample. We analyze the electron Hall mobility, resistivity, electron Hall concentration, breakdown voltage and reverse current of samples before and after irradiation using different dose rates. K: Radiation damage to detector materials (solid state); Solid state detectors; Materials for solid-state detectors 1Corresponding author.

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“…The reported GaAs‐based electron spectrometer has been demonstrated to function up to 100 °C (Figure ), within the energy range 1 to 66 keV. Previous reports on GaAs have proved the material's high radiation resistance (e.g., Dixit et al, ; Ladzianský et al, ; Ly Anh et al, ; Rossi et al, ; Šagátová et al, ). Both of these attributes suggest that the reported electron spectrometer may be used in numerous future space missions to intense radiation and high temperature environments (up to 100 °C, without the need for cooling).…”

Section: Discussionmentioning

confidence: 89%

“…The relatively low electron‐hole pair creation energy of GaAs (4.184 eV at 300 K; Bertuccio & Maiocchi, ) provides similar charge carrier creation statistics and Fano‐limited spectroscopic resolution as Si (Bertuccio, ). Furthermore, GaAs has been proven to be radiation resistance to γ‐rays (Dixit et al, ; Ly Anh et al, ), fast neutrons (Ladzianský et al, ), and high‐energy electrons (Šagátová et al, ). Indeed, GaAs is more radiation hard than Si for γ‐rays, electrons, and low energy protons and neutrons (Rossi et al, ).…”

Section: Introductionmentioning

confidence: 99%

GaAs Spectrometer for Planetary Electron Spectroscopy

et al. 2018

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Work toward producing a radiation‐hard and high temperature tolerant direct detection electron spectrometer is reported. The motivation is to develop a low‐mass, low‐volume, low‐power, multimission capable instrument for future space science missions. The resultant prototype electron spectrometer employed a GaAs p+‐i‐n+ mesa photodiode (10 μm i layer thickness; 200 μm diameter) and a custom‐made charge‐sensitive preamplifier. The GaAs detector was initially electrically characterized as a function of temperature. The detector‐preamplifier assembly was then investigated for its utility in electron spectroscopy across the temperature range 100 to 20 °C using a laboratory 63Ni radioisotope β− particle source (end point energy = 66 keV). Monte Carlo simulations using the computer program CASINO were conducted and showed that the spectrometer had a quantum detection efficiency which increased with increasing electron energy up to 70 keV; a quantum detection efficiency of 73% was calculated. The accumulated 63Ni β− particle spectra together with CASINO simulations of the detected spectra showed that the GaAs based spectrometer could be used for counting electrons and measuring the energy deposited per electron in the detector's active region (i layer). The development of a GaAs electron spectrometer of this type may find use in future space missions to environments of intense radiation (such as at the surface of Europa for investigation of electron‐driven radiolysis of ice) and high temperature (such as at Mercury, and comets passing close to the Sun).

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GaAs detectors irradiated by low doses of electrons

Cited by 14 publications

References 14 publications

Prototype GaAs X‐ray detector and preamplifier electronics for a deep seabed mineral XRF spectrometer

Prototype GaAs X‐ray detector and preamplifier electronics for a deep seabed mineral XRF spectrometer

The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

GaAs Spectrometer for Planetary Electron Spectroscopy

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