GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Niu, Zhichuan; Zhang, Shiyong; Ni, Haiqiao; Wu, Donghai; Zhao, Hongliang; Peng, Hongling; Xu, Yingqiang; Li, S. Y.; He, Zhi; Ren, Zhengliang; Han, Qin; Yang, Xiaoguang; Du, Yan; Wu, Rongchang

doi:10.1063/1.2140614

Cited by 37 publications

(14 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Significant progress was made in this area, [4][5][6] leading to roomtemperature continuous-wave operation at 1.55 m and recently single mode GaInNAsSb/ GaNAs QW based distributed feedback lasers at the same wavelength were demonstrated. 7 In this paper, we analyze the dynamical properties of the gain and refractive index of GaInNAsSb/ GaNAs QW based semiconductor optical amplifiers ͑SOAs͒ using pump probe spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Piwoński¹,

Pulka²,

Madden³

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

The gain and refractive index dynamics of dilute nitride antimonide semiconductor optical amplifiers are studied using heterodyne pump probe spectroscopy, both in forward and reverse bias regimes. In the forward biased absorption regime, both gain and refractive index relax on the same timescale indicating that both quantities are linked to the same relaxation process, interband recombination. Above transparency, in the forward biased gain regime, the gain and phase exhibit differing timescales resulting in a dynamical alpha factor that varies strongly with time. Reversed bias measurements suggest a recombination dominated absorption recovery where the recovery timescale increases with increasing reversed bias, possibly due to charge separation effects.

show abstract

Section: Introductionmentioning

confidence: 99%

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Piwoński¹,

Pulka²,

Madden³

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…A successful realization of ~1.5 µm lasers with the lowest threshold current has been achieved by using a GaInNAsSb/GaNAs quantum well (QW) as the active region [22]. More recently, room-temperature continuous wave operation at 1.55 µm [23,24] and 1.59 µm [25,26] has been demonstrated by using GaInNAsSb/GaNAs QW active regions on GaAs.…”

Section: Introductionmentioning

confidence: 99%

Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

Harris

Kudrawiec

Yuen

et al. 2007

Physica Status Solidi (b)

View full text Add to dashboard Cite

In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2 -1.6 µm range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5 -1.6 µm lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 µm based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper.

show abstract

“…This material was used to demonstrate very promising edge-emitting lasers [5,6] and VCSELs [7] operating just below 1:5 mm. More recently, room-temperature continuous wave operation at 1:55 mm [8,9] and 1:59 mm [10] has been demonstrated using GaInNAsSb active regions on GaAs.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy growth of GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence

Gupta

Sproule

et al. 2006

Journal of Crystal Growth

View full text Add to dashboard Cite

GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Cited by 37 publications

References 15 publications

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

Molecular beam epitaxy growth of GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence

Contact Info

Product

Resources

About