2009
DOI: 10.1002/adma.200801032
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Fully Transparent Thin‐Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes

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Cited by 62 publications
(55 citation statements)
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References 14 publications
(30 reference statements)
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“…In order for the photosensor element to meet the requirements of both light sensitivity and manageable dark state device characteristics, a bilayer HfInZnO (HIZO)/ [(In 2 O 3 )-(ZnO)] (IZO) active semiconductor was used, as shown Ever-evolving advances in oxide semiconductor materials and devices [1][2][3][4][5] continue to drive leading-edge developments in transparent electronics, [6][7][8][9] thanks to new integration processes, enabling large-area processing on rigid and fl exible substrates. In transparent electronics, the key materials are wide bandgap semiconductors, such as oxide semiconductors.…”
Section: Doi: 101002/adma201401955mentioning
confidence: 99%
“…In order for the photosensor element to meet the requirements of both light sensitivity and manageable dark state device characteristics, a bilayer HfInZnO (HIZO)/ [(In 2 O 3 )-(ZnO)] (IZO) active semiconductor was used, as shown Ever-evolving advances in oxide semiconductor materials and devices [1][2][3][4][5] continue to drive leading-edge developments in transparent electronics, [6][7][8][9] thanks to new integration processes, enabling large-area processing on rigid and fl exible substrates. In transparent electronics, the key materials are wide bandgap semiconductors, such as oxide semiconductors.…”
Section: Doi: 101002/adma201401955mentioning
confidence: 99%
“…Finally, the fabrication of fully transparent TFTs has been also demonstrated by Kim et al using aligned SWCNT arrays as the active channel, an ALD HfO 2 gate dielectric, and ITO electrodes [96]. In order to improve the on/off ratio of the TFTs, electrical 'burning' was performed to remove the metallic SWCNTs contained in the SWCNT mixture.…”
Section: Transparent Nanowire Circuits and Displaysmentioning
confidence: 99%
“…Among TCOs, materials such as indium oxide (IO), tin oxide (TO) or tin-doped indium oxide (ITO) [1][2][3][4][5][6] and emerging alternatives such as graphene and Cu or Ag NWs for example [7,8], have been a consistent focus of research interest [9] where transparency is a useful visible range or indeed other wavelength regions of interest, is matched by sheet resistances below 10 Ω/□ [10]. ITO is the TCO used most often and its applications vary from thin film transistors [2,6,[11][12][13], optical circuits [14], displays [15,16], touch screens [17], and also as a transparent contact in solar cells [5,[18][19][20].…”
Section: Introductionmentioning
confidence: 99%