1980
DOI: 10.1109/isscc.1980.1156077
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Abstract: A FULLY STATIC 16K CMOS RAM using a high density Si-gate bulk CMOS process and a circuit with a basic six-transistor CMOS RAM cell will be reported. The memory offers a 9511s typical access time, 200mW active power dissipation and standby power of less than 1pW.Double polysilicon MOS technology has allowed static RAMS to reach 16K chips with polysilicon load devices. However, their standby current should be relatively high, since the load resistance value must be kept low to compensate for process variations.…

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