FTIR Study of the Oxidation of Porous Silicon

Mawhinney, Douglas B.; Glass, John A.; Yates, John T.

doi:10.1021/jp963322r

Cited by 324 publications

(297 citation statements)

References 39 publications

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“…The spectrum of the SiNW before the HF-dip includest he broad modes of SiÀOÀSi around 1020 cm À1 and d(O y SiÀH x )a t8 75 cm À1 . [25] After the HF-dip the SiNW are hydrogen terminated without any traces of oxide species. The characteristic SiÀH x bands are located around 2100 and 913 cm À1 .…”

Section: Functionalization Of Porous Silicon Nanowires With Acrylic Acidmentioning

confidence: 99%

Lithiation Behavior of Silicon Nanowire Anodes for Lithium‐Ion Batteries: Impact of Functionalization and Porosity

et al. 2017

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Metal‐assisted chemical etching (MACE) provides a versatile way to synthesize silicon nanowires (SiNW) of different morphologies. MACE was used to synthesize oxide‐free porous and nonporous SiNW for use as anodes for lithium‐ion batteries. To improve their processing behavior, the SiNW were functionalized using acrylic acid. Differential capacity plots were used as a way to identify the degradation processes during cycling through tracking the formation of Li15Si4 and changes in polarization. The cycling performance between porous and nonporous SiNW differed regarding Coulombic efficiency and cycling stability. The differences were attributed to the porous hull and its ability to reduce the volume expansion, although not through its porous nature but the reduced uptake of Li ions.

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Section: Functionalization Of Porous Silicon Nanowires With Acrylic Acidmentioning

confidence: 99%

Lithiation Behavior of Silicon Nanowire Anodes for Lithium‐Ion Batteries: Impact of Functionalization and Porosity

et al. 2017

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“…In fact, the relatively distinct peak observed at ϳ1107 cm −1 has been assigned to the bulk Si-O-Si mode. 27,28 The distinct peak observed at ϳ668 cm −1 in the FTIR spectrum of HF-prepared PSi ͓Fig. 4͑b͔͒ can be assigned to the Si-H n wagging vibration of SiH 2 surface species.…”

Section: Ftir Spectroscopymentioning

confidence: 99%

Ultraviolet emission from porous silicon photosynthesized in aqueous alkali fluoride solutions

Uchida

Tomioka

Adachi

2006

Journal of Applied Physics

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Stable ultraviolet ͑UV͒ photoluminescence ͑PL͒ has been observed at room temperature in porous silicon ͑PSi͒ fabricated by photoetching in aqueous alkali fluoride solutions. The aqueous solutions used are 1 M NaF and 1 M KF. They give an alkaline reaction caused by partial hydrolysis. The PL peaks at ϳ3.3 eV have a full width at half maximum of ϳ0.1 eV, which is much smaller than those reported previously ͑ജ0.5 eV͒. Spectral analyses suggest that both quantum confinement and surface passivation effects enable the observation of UV emission in NaF-and KF-prepared PSi samples.

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“…This new absorption peak occurs at ϳ1065 cm −1 and is assigned to the surface Si-O-Si stretching mode ͑Si-O-Si͒. 8 The correlation between the PL and FTIR spectra for freshly prepared PSi in 1 M KF solution and that passively etched in 47% HF solution is shown in Fig. 4.…”

mentioning

confidence: 93%

“…Indeed, the ϳ1107 cm −1 peak has been assigned to the bulk Si-O-Si mode. 7,8 The FTIR spectra of the HF-cleaned silicon ͓Fig. 3͑b͔͒ and HF-prepared PSi ͓Fig.…”

mentioning

confidence: 99%

Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution

Tomioka

Adachi

2005

Applied Physics Letters

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A new method of fabricating porous silicon emitting in the ultraviolet ͑UV͒ spectral region is presented. This method uses photoetching in an aqueous salt ͑KF͒ solution. Strong UV photoluminescence is observed at ϳ3.3 eV with a full width at a half maximum of ϳ0.1 eV, which is much narrower than those reported previously. Fourier transform infrared spectroscopy suggests that the surface oxide produced during photoetching plays an important role in the UV emission of the KF-prepared PSi. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.2149157͔The observation of visible room-temperature photoluminescence ͑PL͒ from porous silicon ͑PSi͒ for understanding the optical properties of silicon and fabricating silicon-based optoelectronic devices has attracted considerable interest. 1 Most of the PSi films were produced by anodic etching in a HF-based solution. Since this method requires electrodes both in the electrolyte solution and on the back surface of the silicon wafer, it makes the formation of PSi layers in various complex material systems and structures difficult.To overcome this, Fathauer et al. 2 carried out stain etching of silicon in HF : HNO 3 :H 2 O 2 solutions and obtained porous layers similar to those produced by anodic etching. Several groups also proposed a method of photoetching in an aqueous HF solution or a mixture of HF and H 2 O 2 under the illumination of a He-Ne laser. 3,4 Such photosynthesized PSi samples showed a red or a yellow emission at room temperature. [2][3][4] In this letter, we report on the properties of ultraviolet ͑UV͒-emitting PSi studied by PL, ex situ atomic force microscopy ͑AFM͒, and Fourier transform infrared ͑FTIR͒ spectroscopy. The PSi samples investigated here are formed by photoetching in an aqueous salt ͑KF͒ solution. Recently, we have shown that an aqueous KF solution causes the removal of the native oxide on silicon upon immersing the sample into the solution. 5 Note that KF is less toxic and easier to handle than HF. Our prepared PSi emits a strong and stable UV light with a considerably narrow spectral width.The samples used in this study were n-type Si͑111͒ with a resistivity of 13-20 ⍀ cm. They were first degreased using organic solvents in an ultrasonic bath and then rinsed in deionized ͑DI͒ water. Photochemical etching was performed by illuminating a 5 mW He-Ne laser ͑ = 632.8 nm͒ onto the sample surface in 1 M KF solution. The laser spot size was approximately 1 mm. For comparison, we fabricated PSi using the same method, but immersed in 25% ͑12.5 M͒ HF solution. After photoetching, the samples were rinsed in DI water.The surface morphology of the PSi samples was investigated by ex situ AFM, using a Digital Instruments Nanoscope III. PL measurements were performed using a grating spectrometer ͑Jasco CT-25C͒ and a Peltier-device-cooled photomultiplier tube ͑Hamamatsu R375͒. The 325 nm line of a He-Cd laser ͑Kimmon IK3302R-E͒ chopped at 328 Hz was used as the excitation light source. The surface chemistry of the PSi samples was monitored by FTIR spectroscopy....

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FTIR Study of the Oxidation of Porous Silicon

Cited by 324 publications

References 39 publications

Lithiation Behavior of Silicon Nanowire Anodes for Lithium‐Ion Batteries: Impact of Functionalization and Porosity

Lithiation Behavior of Silicon Nanowire Anodes for Lithium‐Ion Batteries: Impact of Functionalization and Porosity

Ultraviolet emission from porous silicon photosynthesized in aqueous alkali fluoride solutions

Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution

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