From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters

Sée, Johann; Dollfus, Philippe; Galdin, S.; Hesto, P.

doi:10.1007/s10825-006-7917-3

Cited by 19 publications

(21 citation statements)

References 17 publications

(17 reference statements)

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“…The method used in the code SENS to simulate QD-based single-electron devices has been described elsewhere for single- [27,28] and double-dot [29] DTJs or SETs [30]. Here, we just summarize briefly the main stages of the calculation.…”

Section: Modelmentioning

confidence: 99%

“…where S barr is a surface inside the tunnel barrier which separates arbitrarily the dot and the electrode domains [28], ψ d and ψ L are the wave functions in the QD and the lead, respectively, and m barr is the electron effective mass in the barrier. The wave function ψ L is deduced from an analytical expression derived within the WKB approximation, which has been proven correct in the simple case of a triangular barrier [28].…”

Section: Modelmentioning

confidence: 99%

“…The wave function ψ L is deduced from an analytical expression derived within the WKB approximation, which has been proven correct in the simple case of a triangular barrier [28]. The tunneling rates are then used as input data in a MC algorithm to compute the tunnel transitions.…”

Section: Modelmentioning

confidence: 99%

“…This time-dependent method of counting statistics simulation is very effective to extract the SN in such devices. It has been initially developed for the computation of I-V characteristics of DTJs [28] and has been extended to double-dot structures [29] and single-electron transistors (SETs) [30]. The simulation mainly consists in the self-consistent solution of the 3-D Poisson-Schrödinger equations, the calculation of bias-dependent tunneling rates, and the MC treatment of these rates to compute the I-V characteristics and bias-dependent Fano factor.…”

Section: Introductionmentioning

confidence: 99%

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Sub- And Super-Poissonian Noise in Si Quantum Dots Using Fully Self-Consistent 3d Simulation

et al. 2012

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Communicated by Kamal BardhanThe 3D Monte Carlo simulation of an Si dot-based double-tunnel junction shows not only the possibility of shot noise suppression down to the Fano factor of 0.5, but also of super-Poissonian noise. The counting statistics of the tunneling events provides a clear interpretation of the different noise regimes according to the balance between the different tunneling rates involved.the Fano factor is also known as the dispersion index in probability theory and in statistics.Many works have been devoted to the SN in resonant tunneling diodes (RTDs), operating either in coherent or sequential regime. Noise suppression is commonly observed in resonant bias while the super-Poissonian noise has been evidenced in the negative differential conductance (NDC) regime, both experimentally [7-9] and theoretically [10][11][12][13][14]. The effects of Pauli exclusion, Coulomb correlations, charge accumulation in the quantum well and the interplay of these effects have been shown to generate both sub-Poissonian noise in the linear regime and super-Poissonian noise in the NDC regime.Coulomb blockade systems, where the granularity of charge is an essential ingredient, are also of strong interest regarding SN. In the case of quantum dots (QDs) coupled to external leads via tunnel junctions, it has been predicted [15] and experimentally observed [6,16] that if the I-V characteristics exhibits well-defined Coulomb staircase, the SN may be suppressed down to the limit F min = 1/2 when the symmetry between in-and out-tunneling rates is achieved. Super-Poissonian SN has been also predicted theoretically in metallic systems with multiple dots capacitively coupled [17][18][19]. It has been also experimentally observed in semiconducting QDs in high bias regime by probing excited states in the dot of long relaxation time [20] and formulated for the general case of nano-objects asymmetrically coupled to the leads giving rise to an NDC regime [5].Theoretical studies of SN in Coulomb blockade systems are commonly based on one of the two following methods. In the Korotkov formalism [21] derived in the framework of the "orthodox" approach to single electron transport, a Fourier transform is performed on the master equation to derive a general expression for the spectral density of current fluctuations [18,22,23]. Alternatively, the method developed by Levitov and Lesovik, known as the full counting statistics (FCS) [24], consists in the evaluation of the probability distribution functions of the number of electrons transferred to the contacts during a given period of time. These probability distributions contain all the information on the terminal currents, their fluctuations and their correlations. Bagrets and Nazarov have extended the theory to propose a general approach to FCS in the Coulomb blockade regime [25]. The framework of FCS has been used successfully to model the experimental data of time-resolved measurements of electron transport through a quantum dot [20]. However, though these methods may be powerful to ...

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Section: Modelmentioning

confidence: 99%

Section: Modelmentioning

confidence: 99%

Section: Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Sub- And Super-Poissonian Noise in Si Quantum Dots Using Fully Self-Consistent 3d Simulation

et al. 2012

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“…To obtain accurate simulation results for these devices, the knowledge of transport mechanisms in a basic system composed of one quantum dot (here a silicon nanocrystal), embedded in an insulator (here silicon oxide) and connected to two metallic electrodes through tunnel barriers, is required. Whatever the level of accuracy of the physical description considered, the simulation of this type of device is usually based on the hypothesis that the tunnelling process is purely sequential [3]. In other words, it is assumed that the tunnel transfer of one electron through the oxide barriers is slow enough for the electron phase coherence to be systematically broken by inelastic scattering in the dot (e.g.…”

Section: Introductionmentioning

confidence: 99%

Electron/phonon interaction in silicon quantum dots

Valentin

Sée

Galdin‐Retailleau

et al. 2008

2008 9th International Conference on Ultimate Integration of Silicon

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The electron/phonon scattering rates in silicon quantum dots are calculated by including the effect of collisional broadening. The Fermi Golden Rule is modified to take into account the finite width of the energy levels. The obtained rates are then compared to typical rates of tunnel transfer through oxide barrier, which confirms that the transport in most Si dot-based single electron devices is dominated by sequential tunnelling. Furthermore, the evaluation of energy level lifetimes shows the consistency of this scattering model.

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The impact of vacancy defects on the performance of a single-electron transistor with a carbon nanotube island

et al. 2018

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From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters

Abstract: The purpose of this article is to present an accurate way, based on a physical description, to simulate

Cited by 19 publications

References 17 publications

Sub- And Super-Poissonian Noise in Si Quantum Dots Using Fully Self-Consistent 3d Simulation

Sub- And Super-Poissonian Noise in Si Quantum Dots Using Fully Self-Consistent 3d Simulation

Electron/phonon interaction in silicon quantum dots

The impact of vacancy defects on the performance of a single-electron transistor with a carbon nanotube island

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