2010
DOI: 10.1002/smll.201000291
|View full text |Cite
|
Sign up to set email alerts
|

From One Electron to One Hole: Quasiparticle Counting in Graphene Quantum Dots Determined by Electrochemical and Plasma Etching

Abstract: Quantum dots of around 20 nm in size are fabricated using local anodic oxidation. The behavior of the smallest dots in a magnetic field (see image) allows the identification of the charge‐neutrality point and distinguishing of the states with one electron, no charge, and one hole left inside the quantum dot.

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
82
0
1

Year Published

2010
2010
2018
2018

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 103 publications
(84 citation statements)
references
References 27 publications
1
82
0
1
Order By: Relevance
“…The majority of devices were fabricated by connecting graphene islands with narrow constrictions to graphene leads. 40,221,[242][243][244][245][246][247][248][249][250][251][252][254][255][256][257][258][259][260][261][262][263][264][265][266][267][268][269][270][271][272][273][276][277][278] Various designs also used gated regions: top gates on a single layer ribbon 253 and split gates on bilayer graphene. 61,234,274 Other designs used a single constriction as a quantum dot 240,241,275 or high resistive contacts.…”
Section: A Device Geometriesmentioning
confidence: 99%
See 2 more Smart Citations
“…The majority of devices were fabricated by connecting graphene islands with narrow constrictions to graphene leads. 40,221,[242][243][244][245][246][247][248][249][250][251][252][254][255][256][257][258][259][260][261][262][263][264][265][266][267][268][269][270][271][272][273][276][277][278] Various designs also used gated regions: top gates on a single layer ribbon 253 and split gates on bilayer graphene. 61,234,274 Other designs used a single constriction as a quantum dot 240,241,275 or high resistive contacts.…”
Section: A Device Geometriesmentioning
confidence: 99%
“…61,234,274 Other designs used a single constriction as a quantum dot 240,241,275 or high resistive contacts. 279 Patterns were designed with the aim of fabricating single 40,61,234,[240][241][242][243][244][245][246][247][248][249]251,252,[258][259][260]263,[265][266][267][268]271,[274][275][276][277][278][279] or serial double quantum dots. 221,250,[253][254][255]257,261,262,264,267,269,270,…”
Section: A Device Geometriesmentioning
confidence: 99%
See 1 more Smart Citation
“…The modulation of the band gap of GQDs by various means has attracted great interest for potential applications. The band gap properties of GQDs are caused by quantum confinement effects [6][7][8]. In general, the band gap or the PL emission of GQDs can be modulated by their size and chemical functionalization.…”
Section: Introductionmentioning
confidence: 99%
“…The quantum confinement caused by reduced dimensionality of these structures opens a tunable bandgap 7,17 . Several studies have characterized the electronic properties of GNF 5,18-39 and some have shed light on their optical features [20][21][22][23][24]27,33,34,[40][41][42][43][44] .…”
Section: Introductionmentioning
confidence: 99%