Free-space MEMS tunable optical filter on [110] silicon

Lipson, Ariel; Yeatman, Eric M.

doi:10.1109/omems.2005.1540083

Cited by 12 publications

(6 citation statements)

References 7 publications

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“…Many techniques can be used to produce vertical structures on silicon substrate as mentioned in [Lipson & Yeatman 2005], [Yun et al 2006] and [Song et al 2007]. They are based on either dry or wet etching of silicon using KOH.…”

Section: Fabrication Technology For Si-air Bragg Reflectors (For Memsmentioning

confidence: 99%

MEMS based deep 1D photonic crystal

Malak¹,

Bourouina²

2012

Photonic Crystals - Introduction, Applications and Theory

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Section: Fabrication Technology For Si-air Bragg Reflectors (For Memsmentioning

confidence: 99%

MEMS based deep 1D photonic crystal

Malak¹,

Bourouina²

2012

Photonic Crystals - Introduction, Applications and Theory

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“…Some previous works determined the performance degradation of in‐plane optical devices deeply etched into the Si substrate due to RIE imposed fabrication imperfections [5–8]. While others benefit from potassium hydroxide (KOH) crystalline etching of (110) Si wafers after deep RIE of Si due to extremely small etch rate in 〈111〉 direction in these wafers which results in vertical (111) sidewalls with high smoothness and good verticality [7–10].…”

Section: Introductionmentioning

confidence: 99%

Exploitation of semi‐sequential reactive ion etch processes to fabricate in‐plane Si structures

Zarei

Mohajerzadeh

2018

Micro & Nano Letters

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The work reports on the exploitation of semi-sequential deep reactive ion etching (RIE) processes for realisation of deep vertically etched Si structures on Si substrate applicable in fibre-optic sensing systems. These processes employ different mixtures of gases including hexaflourosulphide, hydrogen and oxygen in a RIE system with a programmed passivation and etching sub-cycles. In the so-called semisequential processes, the intermediate purging steps are eliminated, which results in remaining little trace of reactant gases from the previous sub-cycle in the RIE machine's chamber, which can participate in the process of current sub-cycle. For the sake of minimum optical losses, which are accomplished by highly smooth vertical sidewalls, several etching processes were applied. In these processes, by controlling the etching parameters such as the flow of gases, plasma power and timing of each subsequence, the process can be controlled for minimum under-etch and surface roughness and maximum verticality of sidewalls. However, time and cost considerations should also be noted in the optimum fabrication process.

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“…Tunable silicon optical filters using deformable Bragg gratings or tunable Fabry-Perot (FP) cavities were recently proposed [1] and demonstrated [2][3][4]. These tunable filters can be used for a variety of applications such as optical filtering in telecommunications, biochemical sensing and tunable lasers.…”

Section: Introductionmentioning

confidence: 99%

Tunable Erbium Doped Fiber Laser Using a Silicon Micro-Electro-Mechanical Fabry-Perot Cavity

Masson

Poulin

Godbout

et al. 2007

2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics

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We propose a novel tunable erbium doped fiber laser using a silicon micro-electro-mechanical (MEM) Fabry-Perot cavity. The cavity is made of two Bragg mirrors, one being actuated by comb drives. The MEM Fabry-Perot cavity and grooves for optical fibers are fabricated by DRIE on a 70 µm SOI wafer and integrated in a ring fiber laser configuration. The fiber laser has a tuning range of 7.7 nm in the C-band and a spectral width of 0.1 nm.

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Free-space MEMS tunable optical filter on [110] silicon

Cited by 12 publications

References 7 publications

MEMS based deep 1D photonic crystal

MEMS based deep 1D photonic crystal

Exploitation of semi‐sequential reactive ion etch processes to fabricate in‐plane Si structures

Tunable Erbium Doped Fiber Laser Using a Silicon Micro-Electro-Mechanical Fabry-Perot Cavity

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