2015
DOI: 10.1002/adfm.201501607
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Fragile‐to‐Strong Crossover in Supercooled Liquid Ag‐In‐Sb‐Te Studied by Ultrafast Calorimetry

Abstract: Phase‐change random‐access memory relies on the reversible crystalline‐glassy phase change in chalcogenide thin films. In this application, the speed of crystallization is critical for device performance: there is a need to combine ultrafast crystallization for switching at high temperature with high resistance to crystallization for non‐volatile data retention near to room temperature. In phase‐change media such as nucleation‐dominated Ge2Sb2Te5, these conflicting requirements are met through the highly “frag… Show more

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Cited by 128 publications

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“…Thus, the T g / T m ratio is a figure of merit that helps to define the amorphous-to-crystalline conversion rates. In this context, the T g / T m ratio for GST and AIST ranges from ∼0.42 to 0.56. , These ratios are in line with the fast crystallization rate in GST and AIST on the time scale of a few nanoseconds. The glass transition feature is the result of a small enthalpy of relaxation of the amorphous material. For KBS, we were unable to determine this small relaxation event by DSC because of the small amount (∼1 mg) of the KBS film sample.…”
Section: Results
supporting
confidence: 79%