Fracture Strain of SiC Nanowires and Direct Evidence of Electron‐Beam Induced Amorphisation in the Strained Nanowires

Abstract

SiC nanowires with diameters ranging from 29 to 270 nm exhibit an average strain of 5.5% with a maximum of up to 7.0%. The brittle fracture of the nano-wires being measured was confirmed by transmission electron microscopy (TEM) analysis. This study demonstrates that amorphisation occurs in the stained SiC nanowires during normal TEM examination, which could be induced by electron irradiation.

Effects of surface defects on the mechanical properties of ZnO nanowires

“…ZnO NWs were synthesized on a Si wafer by catalyst-free chemical vapour deposition 36 . The transfer of NWs was performed through OM nanomanipulation 34 , 35 , 37 and resonance testing was performed using a Scanning Laser Doppler Vibrometry (SLDV, Polytec MSA-500; wavelength λ = 633 nm; power <1 mW; Objectives: Mitutoyo M Plan APO Plan 100×) 32 , 33 . NWs were positioned at the frame edge of a SiN TEM grid to form NW cantilevers using a chemically etched W tip for resonance testing (The SiN TEM grid (product no.…”

A High‐Energy Density Asymmetric Supercapacitor Based on Fe2O3 Nanoneedle Arrays and NiCo2O4/Ni(OH)2 Hybrid Nanosheet Arrays Grown on SiC Nanowire Networks as Free‐Standing Advanced Electrodes

“…[37][38][39] Especially, as for SiC nanowires (NWs), central to their favorable properties that outperform some other semiconductor nanowires is their high electron mobility, low band gap, large specific surface area, good electrical conductivity, outstanding mechanical strength, as well as desirable thermal stability and anticorrosion and antioxidation, which makes them advantageous for extensive applications in energy storage systems, in particular, in hightemperature/high-voltage/chemically harsh environments. [40][41][42][43][44] Moreover, Gu et al, [45] Alper et al, [46] and Chen et al [47] have fabricated SiC NWs directly deposited on CC or SiC films as self-supported electrodes for SCs, presenting long-term cycling lifespan, high flexibility, and areal capacitance. Therefore, when SiC NWs with versatile advantages are selected as supporters for growing the electroactive Fe 2 O 3 , the frameworks not only can make the active materials uniformly disperse, providing shorter diffusion pathways for electrolyte ions and facilitating highly efficient transport of electrons but also serve as a buffering phase for the volume changes of the active materials, effectively avoiding the collapse of the composite electrode structures.…”

Flexible Transparent and Free‐Standing SiC Nanowires Fabric: Stretchable UV Absorber and Fast‐Response UV‐A Detector

“…Herein, a new method for 2H‐SiC flexible, transparent, self‐standing nanowire fabric (FTS‐NWsF) formation via a simple one‐step chemical vapor deposition (CVD) process is reported, motivated by the fact that SiC is an important third‐generation semiconductor that is widely applied in microelectronics . The nanowire quality stands alongside the self‐assembly of the nanowire fabric as another stubborn difficulty, because the occurrence of complex planar stacking faults (SFs) is a ubiquitous and uncontrollable event . This feature and the indirect nature of their bandgap mean that SiC nanowires are seldom applied for photonic purposes because of the screening effects of phonon processes, despite their many advantages, including being well suited to high‐frequency, high‐power, and high‐temperature devices, and possessing anticorrosion and radio resistance properties .…”