Fowler–Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping

Trench DMOS interface trap characterization by three-terminal charge pumping measurement

“…The drain current is observed as a function of a varying-base voltage pulse applied to the gate while the source terminal is grounded [3,7]. The pulse unit or pulse generator is used to alternate the trench DMOS between accumulation and inversion modes [3,7].…”

“…However, the application of CCP is more profound to the planar MOSFET [3,7] with substrate contact since CCP setup needs the four electrical contacts to the gate, drain, source, and substrate where it measures the I CP from the substrate [1][2][3]7,8]. Therefore, a practical three-terminal charge pumping (3T-CP) technique presented by Passmore et al [3,7] for vertical transistor structures is found to be suitable for trench DMOS with the absence of substrate contact.…”

“…Therefore, a practical three-terminal charge pumping (3T-CP) technique presented by Passmore et al [3,7] for vertical transistor structures is found to be suitable for trench DMOS with the absence of substrate contact.…”

“…The 3T-CP method for vertical structures by Passmore et al [3,7] specifies that the drain current (I D ) is measured as a function of a varying-base voltage pulse applied to the gate while the source terminal is grounded (as a function of the gate-to-source voltage, V GS ) [3,7]. The pulse is used to alternate the U-shaped trench-gated Vertical MOSFET (UMOSFET) between accumulation and inversion modes [3,7].…”

“…The pulse is used to alternate the U-shaped trench-gated Vertical MOSFET (UMOSFET) between accumulation and inversion modes [3,7]. 3T-CP is important to evaluate the effects of hot carrier (HC) [1,2,5,7] and Fowler-Nordheim (FN) stress [1][2][3]7] on nchannel UMOSFET. The numerical CP values are calculated using the formula developed by Groeseneken et al [4].…”