Formation of ZnSe on Ag(111) by electrochemical atomic layer epitaxy

Pezzatini, Giovanni; Caporali, Stefano; Innocenti, Massimo; Foresti, Maria Luisa

doi:10.1016/s0022-0728(99)00347-2

Cited by 75 publications

(48 citation statements)

References 25 publications

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“…Numerous compounds that have been successfully formed by electrochemical ALD, include II-VI compounds such as CdTe [44,[50][51][52][53][54][55][56], CdS [35,57], ZnSe [58], ZnS [57] and CdS/HgS superlattices [59], IV-VI compounds such as PbS [60], PbSe [43] and superlattice of PbSe/PbTe [33], as well as III-V compounds such as GaAs [61,62], InAs [63,64], InSb [65] and superlattices of InAs/InSb [65]. This paper will focus on the optimization of an electrochemical ALD cycle used for the growth of PbTe nanofilms on Au on glass substrates.…”

Section: Introductionmentioning

confidence: 99%

Formation of PbTe nanofilms by electrochemical atomic layer deposition (ALD)

Banga

Vaidyanathan

Liang

et al. 2008

Electrochimica Acta

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Section: Introductionmentioning

confidence: 99%

Formation of PbTe nanofilms by electrochemical atomic layer deposition (ALD)

Banga

Vaidyanathan

Liang

et al. 2008

Electrochimica Acta

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“…In ECALE, surface limited reaction means under potential deposition (UPD), which involves a formation of up to a monolayer of atoms on foreign substrates at potentials positive from the reversible Nernst potential in the same solution. Presently IIB-VIA compounds such as CdTe [6][7][8] , CdSe [9] and ZnSe [10] , and IIIA-VA compounds such as GaAs [11] , InAs [12] and InAs/InSb [13] have been studied by ECALE. In the previous work, we have already studied the formation of Bi 2 Te 3 by ECALE successfully [14,15] .…”

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confidence: 99%

Deposition of antimony telluride thin film by ECALE

et al. 2006

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The process of Sb 2 Te 3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb 2 Te 3 film was formed using an automated flow deposition system by alternately depositing Te and Sb atomic layers for 400 circles. The deposited Sb 2 Te 3 films were characterized by XRD, EDX, FTIR and FESEM observation. Sb 2 Te 3 compound structure was confirmed by XRD pattern and agreed well with the results of EDX quantitative analysis and coulometric analysis. FESEM micrographs showed that the deposit was composed of fine nano particles with size of about 20 nm. FESEM image of the cross section showed that the deposited films were very smooth and dense with thickness of about 190 nm. The optical band gap of the deposited Sb 2 Te 3 film was determined as 0.42 eV by FTIR spectroscopy, and it was blue shifted in comparison with that of the bulk Sb 2 Te 3 single crystal due to its nanocrystalline microstructure.

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“…Indeed, we have used ECALE to successfully obtain a number of binary and ternary semiconductor thin films. These compounds include cadmium sulfide (CdS), 7-11 cadmium telluride (CdTe), 12 cadmium selenide (CdSe), 13 zinc sulfide (ZnS), 14 zinc selenide (ZnSe), 14 nickel sulfide (NiS), 15 lead sulfide (PbS), [16][17][18] copper sulfide (CuS), 19,20 and indium arsenide (InAs). 21 A specific need in our field of work is for the structural characterization-with the use of opportunistic analytical techniques-of the ultra-thin films that are obtained from the electrochemical deposition techniques.…”

Section: 1117/21201512006249 Page 2/3mentioning

confidence: 99%

Fabricating energy devices with low environmental impacts

Innocenti¹,

Benedetto²,

Lavacchi³

et al. 2016

SPIE Newsroom

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Techniques such as electrochemical atomic layer epitaxial deposition can be used to grow high-quality pseudo-2D layers of photovoltaic materials.Efforts to reduce the rate of carbon emissions from industry, 1 as well as the impending economic and social problems that could arise from the depletion of fossil fuels, 2 are the two driving forces for the development of devices that can generate electric power from renewable sources. It is necessary for research and development in this field to satisfy a few major requirements. In the last few decades, the increasing demand for high-tech applications has led to increasing solicitation of mineral deposits and has brought many rare metals to the brink of irreversible depletion. 3 It is therefore necessary for new devices to be based on abundant materials that are available on a global or local scale. The whole 'life cycle' of the materials must also be environmentally friendly (i.e., the materials must be non-toxic and easily recycled). Moreover, the materials must be energetically favorable, i.e., they must involve low-energy consumption processes during all the phases of the life cycle (production, to maintenance, to decommission, to recycling). This final aspect-which can be determined accurately through a full life cycle assessment (LCA)-depends on the energy costs and energy conversion efficiency of the device itself. In a full LCA, several parameters are estimated. These include the payback time (time required to earn the energy costs of the production process), the energy return on energy investment (ratio between the energy produced by and the energy costs of the system along the whole life cycle), 4 and the net energy (the energy delivered to society for discretionary uses after all the energetic costs are subtracted from the energy produced). This last figure of merit (i.e., the net energy) is a crucial parameter for defining energy policy. 4 All these requirements for renewable energy devices can be met satisfactorily by solar cells that are based on pseudo-ternary sulfides, such as stannite (Cu 2 FeSnS 4 ), kuramite (Cu 3 SnS 4 ), and kesterite (Cu 2 ZnSnS 4 ). 5 Kesterite-type semiconductors are Figure 1. Schematic illustration of the electrochemical atomic layer epitaxial deposition (ECALE) technique for the growth of quaternary metallic compound thin films.generally synthesized by high-temperature solidification, in the vapor phase, or under high-vacuum conditions. Other easier and cheaper methods (e.g., from aqueous solutions), however, can also be considered. Electrochemical techniques, for example, are particularly suitable for satisfying the requirements. Indeed, with these methods, a low cost can be achieved with relatively simple instrumentation, low working temperatures, and accurate control of the experimental parameters. 6 Furthermore, morphological, structural, and compositional control of the final deposited film can be obtained.In our work, we use a particular electrochemical techniqueknown as electrochemical atomic layer epitaxial deposition...

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Formation of ZnSe on Ag(111) by electrochemical atomic layer epitaxy

Cited by 75 publications

References 25 publications

Formation of PbTe nanofilms by electrochemical atomic layer deposition (ALD)

Formation of PbTe nanofilms by electrochemical atomic layer deposition (ALD)

Deposition of antimony telluride thin film by ECALE

Fabricating energy devices with low environmental impacts

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