2013
DOI: 10.1016/j.tsf.2013.02.003
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Formation of polycrystalline BaSi2 films by radio-frequency magnetron sputtering for thin-film solar cell applications

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Cited by 33 publications
(35 citation statements)
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“…BaSi 2 films can be grown by the molecular beam epitaxy (MBE) [6,7], radio-frequency sputtering [8,9], and vacuum evaporation techniques [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…BaSi 2 films can be grown by the molecular beam epitaxy (MBE) [6,7], radio-frequency sputtering [8,9], and vacuum evaporation techniques [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, for BaSi 2 , a film thickness of <1 µm is commonly used in various experimental studies. [3][4][5][6][7][8][9]22,26) However, it yields a band-gap energy of 1.3 eV. 22,26) In addition, sample quality, growth conditions, and impurities also affect the photoabsorption properties.…”
mentioning
confidence: 99%
“…However, the grown films contain metallic phases such as Ba 2 Si and Ba 5 Si 3 . We have succeeded in fabricating polycrystalline BaSi 2 films on Si(111) substrates by radio-frequency (RF) magnetron sputtering using crystalline BaSi 2 target at RT, followed by post-annealing at 600-700 ºC in UHV [10]. In this study, improving from the previous method, we have deposited polycrystalline BaSi 2 films on glass substrate by sputtering crystalline BaSi 2 target at 600 ºC.…”
mentioning
confidence: 99%