Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects

Deák, Péter; Aradi, Bálint; Kaviani, Moloud; Frauenheim, Thomas; Gali, Ádám

doi:10.1103/physrevb.89.075203

Cited by 181 publications

(168 citation statements)

References 99 publications

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“…A high barrier height of 4.5 eV implies that NV centers are immobile at room temperature or even up to a certain elevated temperature [30]. Calculation shows that the mobilization begins above 1700 • C [31].…”

Section: The Nitrogen-vacancy (Nv) Centermentioning

confidence: 99%

An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation

Haque

Sumaiya

2017

JMMP

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Nitrogen-vacancy (NV) in diamond possesses unique properties for the realization of novel quantum devices. Among the possibilities in the solid state, a NV defect center in diamond stands out for its robustness-its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. In this paper, we illustrated the formation kinetics of NV centers in diamond and their transformation from one charge state to another. The controlled scaling of diamond NV center-based quantum registers relies on the ability to position NV defect centers with high spatial resolution. Ion irradiation technique is widely used to control the spatial distribution of NV defect centers in diamond. This is addressed in terms of energetics and kinetics in this paper. We also highlighted important factors, such as ion struggling, ion channeling, and surface charging, etc. These factors should be considered while implanting energetic nitrogen ions on diamond. Based on observations of the microscopic structure after implantation, we further discussed post-annealing treatment to heal the damage produced during the ion irradiation process. This article shows that the ion implantation technique can be used more efficiently for controlled and efficient generation of NV color centers in diamond, which will open up new possibilities in the field of novel electronics and computational engineering, including the art of quantum cryptography, data science, and spintronics.

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Section: The Nitrogen-vacancy (Nv) Centermentioning

confidence: 99%

An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation

Haque

Sumaiya

2017

JMMP

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“…1B) (9)(10)(11). In addition to the neutral and negative charge states, the NV center has been observed in a nonfluorescent state attributed to the positively charged state NV + (12)(13)(14)(15)(16). The large band bending at hydrogenated surfaces can shift the corresponding E NV +/0 transition level and convert NVs closest to the surface from the NV 0 state to the nonfluorescent NV + state (Fig.…”

mentioning

confidence: 99%

Modulation of nitrogen vacancy charge state and fluorescence in nanodiamonds using electrochemical potential

Karaveli

Gaathon

Wolcott

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

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The negatively charged nitrogen vacancy (NV − ) center in diamond has attracted strong interest for a wide range of sensing and quantum information processing applications. To this end, recent work has focused on controlling the NV charge state, whose stability strongly depends on its electrostatic environment. Here, we demonstrate that the charge state and fluorescence dynamics of single NV centers in nanodiamonds with different surface terminations can be controlled by an externally applied potential difference in an electrochemical cell. The voltage dependence of the NV charge state can be used to stabilize the NV − state for spin-based sensing protocols and provides a method of charge state-dependent fluorescence sensing of electrochemical potentials. We detect clear NV fluorescence modulation for voltage changes down to 100 mV, with a single NV and down to 20 mV with multiple NV centers in a wide-field imaging mode. These results suggest that NV centers in nanodiamonds could enable parallel optical detection of biologically relevant electrochemical potentials. (Fig. 1A). The negative charge state (NV − ) is optically addressable and has a long-lived electronic spin state suitable for quantum sensing of local electric and magnetic fields (1-4). However, under constant laser illumination, the NV center can stochastically switch between the negatively charged state and the neutral charge state, NV 0 (5, 6). Because the NV 0 state lacks the NV − state's favorable spin properties, there has been efforts to engineer stable NV − centers in diamond devices (7). Studies have shown that the diamond surface termination strongly affects the charge state of NVs near the surface: hydrogen surface termination increases the fraction of NV 0 over NV −

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“…This disagreement is likely due to a weak onset of photoconduction, thereby making the measurement of the onset energy susceptible to detection sensitivity. Consequently, it is likely that the donor level exists towards the lower bound of the range, near 1.7 eV, as supported by ab initio calculations [52].…”

Section: B N S Centermentioning

confidence: 78%

Towards a Room-Temperature Spin Quantum Bus in Diamond via Electron Photoionization, Transport, and Capture

et al. 2016

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Diamond is a proven solid-state platform for spin-based quantum technology. The nitrogen-vacancy center in diamond has been used to realize small-scale quantum information processing and quantum sensing under ambient conditions. A major barrier in the development of large-scale quantum information processing in diamond is the connection of nitrogen-vacancy spin registers by a quantum bus at room temperature. Given that diamond is expected to be an ideal spin transport material, the coherent transport of spin directly between the spin registers offers a potential solution. Yet, there has been no demonstration of spin transport in diamond due to difficulties in achieving spin injection and detection via conventional methods. Here, we exploit detailed knowledge of the paramagnetic defects in diamond to identify novel mechanisms to photoionize, transport, and capture spin-polarized electrons in diamond at room temperature. Having identified these mechanisms, we explore how they may be combined to realize an on-chip spin quantum bus.

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Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects

Cited by 181 publications

References 99 publications

An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation

An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation

Modulation of nitrogen vacancy charge state and fluorescence in nanodiamonds using electrochemical potential

Towards a Room-Temperature Spin Quantum Bus in Diamond via Electron Photoionization, Transport, and Capture

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