Formation of Ni germano-silicide on single crystalline Si/sub 0.3/Ge/sub 0.7//Si

Abstract

We have studied the Ni and Co germano-silicide on Si 0 3 Ge 0 7 Si. The Ni germano-silicide shows a low sheet resistance of 4-6 on both P + N and N + P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3 10 8 A cm 2 and 2 10 7 A cm 2 are obtained for Ni germano-silicide on P + N and N + P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.

Annealing Temperature Dependence on Nickel–Germanium Solid-State Reaction

“…Nickel is one of the most popular metals to be used for silicide on silicon, germano-silicide on single crystalline 11) or amorphous 12) SiGe film, and germanide on Ge. 5,9) It has been known that many Ni germanides share similar crystallographic structures and have close lattice parameters to their Ni silicide counterparts: Ni 3 Ge-Ni 3 Si, Ni 2 Ge-Ni 2 Si, and NiGe-NiSi.…”

Low-$V_{t}$ TaN/HfLaO $n$-MOSFETs Using Low-Temperature Formed Source–Drain Junctions

“…Good n + /p junction characteristics are obtained in SiO 2 -covered Ni/Sb SPD with small ideality factor of 1.5. The degraded junction characteristics at the highest SPD temperature may be due to the agglomeration of silicide at higher temperature [17], where such temperature dependence was also found in the Ni/Ga SPD case [15]. A low sheet resistance of 125 Ω/sq was measured using SiO 2 -covered Ni/Sb SPD, which is due to the low-resistivity metalliclike silicide.…”

Formation of NiSiGe on compressivly strained SiGe thin layers

“…SiGe layer pseudomorphically grown on a silicon substrate is under compressive strain which further enhances the holes' mobility in a SiGe channel. Nickel based germanides and germano-silicides provide good contact to SiGe [1][2][3][4][5][6]. Moreover, there is a tendency to shrink the thickness of the silicide with the gate length scaling down.…”