“…The higher molecular weight radicals cause a polymer deposition on the top and side wall of contact holes because these radicals have a higher sticking coefficient than the CF 2 radicals in the hole. 18,19 As a result of this, we observed an imbalance between the polymerization and etching, and microloading and etching stop occurred in the high-aspect contact holes. Also, the CF 3 ϩ ion density, the SiO 2 etching rate, and the selectivity were dramatically decreased.…”