Formation and characterization of 4-inch GaN-on-diamond substrates

Francis, Daniel; Faili, Firooz; Babic, D.I.; Ejeckam, F.; Nurmikko, A. V.; Maris, Humphrey J.

doi:10.1016/j.diamond.2009.08.017

Cited by 123 publications

(82 citation statements)

References 9 publications

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“…For ultra-high power applications, even SiC substrates can become a thermal bottle neck. Polycrystalline CVD diamond is being developed for GaN ultra-high-power applications to address this [87,88]. For example, GaN-on-diamond thermal models, using material parameters obtained from Raman thermography measurements, have been used to demonstrate that GaN-on-diamond can offer a >3× reduction in thermal resistance when scaled to large devices, with respect to GaN-on-SiC [85].…”

Section: Raman Thermography For Device Optimizationmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7590091. Please refer to any applicable terms of use of the publisher. University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-termsAbstract-We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs based high electron mobility transistors, and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.

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Section: Raman Thermography For Device Optimizationmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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“…However, managing waste heat is an increasingly important consideration when extending GaN RF HEMT operation to ultra-high-power densities. The heteroepitaxial integration of GaN devices with diamond grown by chemical vapor deposition (CVD), to form GaN-on-diamond, takes advantage of very high thermal conductivity diamond within ~1 µm of where heat is generated in the transistor channel [2]. GaN-on-diamond wafers have been made in diameters up to 100 mm, suitable for commercial wafer processing [2].…”

Section: Introduction Lgan/gan High Electron Mobility Transistors mentioning

confidence: 99%

“…The heteroepitaxial integration of GaN devices with diamond grown by chemical vapor deposition (CVD), to form GaN-on-diamond, takes advantage of very high thermal conductivity diamond within ~1 µm of where heat is generated in the transistor channel [2]. GaN-on-diamond wafers have been made in diameters up to 100 mm, suitable for commercial wafer processing [2]. Excellent electrical and thermal performance has already been demonstrated for RF transistors on GaN-on-diamond wafers [3,4], and 3× higher power densities have been obtained with respect to GaN-on-SiC devices [5].…”

Section: Introduction Lgan/gan High Electron Mobility Transistors mentioning

confidence: 99%

Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

Pomeroy

Simon

Sun

et al. 2014

IEEE Electron Device Lett.

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“…Besides investigations on the adding of a diamond layer on existing GaN structures, 4,5 this research involves bonding of GaN on CVD diamond [6][7][8] and the application of siliconon-diamond substrates. 9,10 Recently, GaN has been deposited directly on several types of diamond substrate, [11][12][13][14][15] leading to the successful fabrication of an AlGaN/GaN HEMT on (111) single crystalline diamond by MBE.…”

Section: Introductionmentioning

confidence: 99%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition. From the influence of pressure, V/III ratio, and temperature, it was deduced that the growth process is determined by the mass-transport of gallium precursor material toward the substrate. The highest temperature yielded an improved epitaxial relationship between grown layer and substrate. X ray diffraction (XRD) pole figure analysis established the presence of two domains of epitaxial layers, namely (0001) h10 10i GaN k (001) [110] diamond and (0001) h10 10i GaN k (001) ½1 10 diamond, which are 90 rotated with respect to each other. The presence of these domains is explained by the occurrence of areas of (2 Â 1) and (1 Â 2) surface reconstruction of the diamond substrate. When applying highly misoriented diamond substrates toward the [110] diamond direction, one of the growth domains is suppressed and highly epitaxial GaN on (001) diamond is realized.

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Formation and characterization of 4-inch GaN-on-diamond substrates

Cited by 123 publications

References 9 publications

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

Realising epitaxial growth of GaN on (001) diamond

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