2008
DOI: 10.1038/nnano.2008.303
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Flying plasmonic lens in the near field for high-speed nanolithography

Abstract: The commercialization of nanoscale devices requires the development of high-throughput nanofabrication technologies that allow frequent design changes. Maskless nanolithography, including electron-beam and scanning-probe lithography, offers the desired flexibility but is limited by low throughput. Here, we report a new low-cost, high-throughput approach to maskless nanolithography that uses an array of plasmonic lenses that 'flies' above the surface to be patterned, concentrating short-wavelength surface plasm… Show more

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Cited by 300 publications
(186 citation statements)
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“…A recent review 101 summarised the advances in sub-diffraction limit DLW. 113 The inventors envisage this technology to be able to pattern a 12 inch wafer in 2 min with sub-100 nm resolution in the future.…”
Section: Direct Laser Writing and Resist Based Nanomanufacturingmentioning
confidence: 99%
“…A recent review 101 summarised the advances in sub-diffraction limit DLW. 113 The inventors envisage this technology to be able to pattern a 12 inch wafer in 2 min with sub-100 nm resolution in the future.…”
Section: Direct Laser Writing and Resist Based Nanomanufacturingmentioning
confidence: 99%
“…This patterned photo-resist can be used as a protective layer in subsequent etching or deposition processes to build topography on the substrate. 2-3 μm [22] very high typical patterning in laboratory level and production of various MEMS devices Photolithography (projection printing) a few tens of nanometers (37 nm) [2] high -very high (60-80 wafers/hr) [1] commercial products and advanced electronics including advanced ICs [1] , CPU chips Electron beam lithography < 5 nm [23] very low [1,3] (8 hrs to write a chip pattern) [1] masks [3] and ICs production, patterning in R&D including photonic crystals, channels for nanofluidics [23] Focused ion beam lithography 20 nm with a minimal lateral dimension of 5 nm [2] very low [3] patterning in R&D including hole arrays [125,134] , bull's-eye structure [132] , plasmonic lens [137] Soft lithography a few tens of nanometers to micrometers [2,13] (30 nm) [2] high LOCs for various applications [13,96] Nanoimprint lithography 6-40 nm [14,15,18] high (> 5 wafers/hr) [1] bio-sensors [17] , bioelectronics [18] , LOCs: nano channels, nano wires [97,102,104] Dip-pen lithography a few tens of nanometers [39,40,43] very low -low, possibly medium [39] bio-electronics [43] , biosensors [40] , gas sensors [42] There are three forms of photolithography: contact printing, proximity printing and projection printing as schematically illustrated in …”
Section: Photolithographymentioning
confidence: 99%
“…The light emerging from the exit plane is only collimated within tens of nanometers, beyond which it diverges quickly and its intensity decreases significantly [11,12]. Therefore, a precise distance control between the aperture and the recording material (i.e., the photoresist) is required to achieve stable and repeatable sub-diffraction lithography patterns [6,10,13].…”
Section: Introductionmentioning
confidence: 99%