2022
DOI: 10.1039/d2dt01420c
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Flower-like Ag2WO4/CeO2 heterojunctions with oxygen vacancies and expedited charge carrier separation boost the photocatalytic degradation of dyes and drugs

Abstract: Charge carrier separation is a very important factor in photocatalysis, and it may be achieved through a variety of paths including the construction of heterojunctions and the formation of surface...

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Cited by 4 publications
(3 citation statements)
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“…6d, where the peaks at 34.7 eV and 36.7 eV are ascribed to W 4f 7/2 and W 4f 5/2 , respectively, which belong to the W( iv ) of WO 4 −2 . 48,49 Fig. 6e demonstrates the peak of the O 1s binding energy at 530.1 eV, which is ascribed to the O 2 − of Ag 2 WO 4 , 49 while the peak at 532.8 eV is due to the Si–O–Si bond in KIT-6 silica.…”
Section: Resultsmentioning
confidence: 98%
“…6d, where the peaks at 34.7 eV and 36.7 eV are ascribed to W 4f 7/2 and W 4f 5/2 , respectively, which belong to the W( iv ) of WO 4 −2 . 48,49 Fig. 6e demonstrates the peak of the O 1s binding energy at 530.1 eV, which is ascribed to the O 2 − of Ag 2 WO 4 , 49 while the peak at 532.8 eV is due to the Si–O–Si bond in KIT-6 silica.…”
Section: Resultsmentioning
confidence: 98%
“…Hence, it is necessary to tune this characteristic to enhance efficiency in diverse applications, and the oxide/Ag 2 WO 4 composite has been used for this purpose. Composite systems with simple oxides such as Ag/ (ZnO, [205], MnWO 4 /Ag 2 WO 4 [206], Ag 2 WO 4 /CeO 2 [207], a-Ag 2 WO 4 /Ag 3 PO 4 [208], CoOeAg 2 WO 4 [209,210], ZnBi 2 O 4 /Ag 2 WO 4 ) [211], and Ag 2 WO 4 /(TiO 2 ,ZnO)/AgX (X ¼ Cl, Br, I) [187e189] have been obtained for diverse synthetic routes. These last three heterojunctions have been described in the present work in the section on composites with Ag 2 WO 4 crystals and halogenbased materials.…”
Section: Compositementioning
confidence: 99%
“…In terms of the successful heterojunction design, several aspects must be taken into consideration according to the suitable bands (VB and CB) alignment of the adjacent semiconductors [225,226]. In particular, for the Ag 2 WO 4 composites, the Z-scheme heterojunction [154e156, 167,185,199, 227e230] and conventional type II heterojunction [169,205,207,211,213,224] are the most employed. A schematic representation of both types of Ag 2 WO 4 heterojunctions is displayed in Fig.…”
Section: Compositementioning
confidence: 99%