Floating-Body SOI Memory: The Scaling Tournament

Bawedin, M.; Cristoloveanu, S.; Hubert, A.; Park, K. H.; Mart́ınez, F.

doi:10.1007/978-3-642-15868-1_21

Cited by 14 publications

(5 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Hence extremely high current ratios I1/I0 can be obtained, enabling easy memory state discrimination. It is worth noting that, as in most capacitorless alternatives (MSDRAM, A2RAM, ZRAM, … [36,37]), the readout process is based on current rather than voltage sensing.…”

Section: Dynamic Memory Cell: Operation As Capacitorless Drammentioning

confidence: 99%

A Review of Sharp-Switching Band-Modulation Devices

et al. 2021

View full text Add to dashboard Cite

This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation.

show abstract

Section: Dynamic Memory Cell: Operation As Capacitorless Drammentioning

confidence: 99%

A Review of Sharp-Switching Band-Modulation Devices

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Especially, 2-T TRAM with the same DN and DP of 10 18 cm -3 shows higher Tret of 100 ms compared to the case of 10 19 cm -3 due to its low junction leakage current. This is because the high junction leakage current of high doping concentrations can increase the recombination rate of carriers stored in the storage regions [30]. Fig.…”

Section: Concentrationmentioning

confidence: 99%

Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory

Kim

Cho

Kong

et al. 2020

IEEE Open J. Nanotechnol.

View full text Add to dashboard Cite

“…The Z 2 -FET 1T-DRAM has a fundamental advantage compared to other types of SOI 1T-DRAMs (28). The memory state is defined not by the stored charge ∆Q G but by the transient current ∆Q G /∆t.…”

Section: Capacitorless 1t-drammentioning

confidence: 99%

(Invited) Innovative Sharp Switching Devices

Cristoloveanu¹,

Wan²,

Royer³

et al. 2013

ECS Trans.

View full text Add to dashboard Cite

Two families of sharp-switching SOI devices are discussed: tunneling field-effect transistors (TFETs) and band-modulation feedback transistors. The TFET is a reverse-biased PIN gated diode, where the gate voltage controls the electric field in the interband P +/N + tunneling junction. Although the TFET current can in principle be switched faster than the subthreshold current of a MOSFET, experimental results have been disappointing to date. Several technological solutions for improving the I ON current and subthreshold swing are reviewed. An innovative solution is to integrate a TFET with a bipolar transistor in a single device (BET-FET), where the bipolar current gain serves to amplify the tunneling current. A different approach is to use band modulation and feedback. The Z2-FET has a TFET-like PIN configuration but is operated in forward bias. In the off-state, the diode current is blocked by electrostatic gate-controlled barriers. When the gate bias reaches a turn-on value, the device switches abruptly (< 1 mV/decade) to a high I ON. We discuss the physical mechanism and unchallenged performance of the Z2-FET, and propose several CMOS-compatible applications, such as 1T-DRAM and SRAM, chemical sensors, logic and protection circuits.

show abstract

Floating-Body SOI Memory: The Scaling Tournament

Cited by 14 publications

References 48 publications

A Review of Sharp-Switching Band-Modulation Devices

A Review of Sharp-Switching Band-Modulation Devices

Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory

(Invited) Innovative Sharp Switching Devices

Contact Info

Product

Resources

About