Flat-Band Electronic Structure and Interlayer Spacing Influence in Rhombohedral Four-Layer Graphene

Wang, Weimin; Shi, Yuchen; Zakharov, Alexei; Syväjärvi, Mikael; Yakimova, Rositsa; Uhrberg, R. I. G.; Sun, Jianwu

doi:10.1021/acs.nanolett.8b02530

Cited by 21 publications

(24 citation statements)

References 35 publications

(79 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The 3R phase is of especial interest nowadays due to the expected flat band at its surface or at its interfaces with the 2H stacking order [51,68]. A flat band in the 3R phase has been found experimentally [48,50,69,70], which correlates with a maximum in the DOS at the Fermi level, enhancing the probability to trigger superconductivity [51,52,71] and/or magnetism [48,72,73] at high temperatures. In particular, STS obtained on a sequence of five layers of 3R phase showed a peak in the DOS around the Fermi level with a width of ∼ 50 meV at half maximum [50].…”

Section: B Rhombohedral Stacking Ordermentioning

confidence: 99%

Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

Ariskina

Schnedler

Esquinazi

et al. 2021

Phys. Rev. Materials

View full text Add to dashboard Cite

Tunneling atomic force microscopy (TUNA) was used at ambient conditions to measure the current-voltage (I-V ) characteristics at clean surfaces of highly oriented graphite samples with Bernal and rhombohedral stacking orders. The characteristic curves measured on Bernal-stacked graphite surfaces can be understood with an ordinary self-consistent semiconductor modeling and quantum mechanical tunneling current derivations. We show that the absence of a voltage region without measurable current in the I-V spectra is not a proof of the lack of an energy band gap. It can be induced by a surface band bending due to a finite contact potential between tip and sample surface. Taking this into account in the model, we succeed to obtain a quantitative agreement between simulated and measured tunnel spectra for band gaps (12 . . . 37) meV, in agreement to those extracted from the exponential temperature decrease of the longitudinal resistance measured in graphite samples with Bernal stacking order. In contrast, the surface of relatively thick graphite samples with rhombohedral stacking reveals the existence of a maximum in the first derivative dI/dV , a behavior compatible with the existence of a flat band. The characteristics of this maximum are comparable to those obtained at low temperatures with similar techniques.

show abstract

Section: B Rhombohedral Stacking Ordermentioning

confidence: 99%

Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

Ariskina

Schnedler

Esquinazi

et al. 2021

Phys. Rev. Materials

View full text Add to dashboard Cite

show abstract

“…3C-SiC can be also employed as the substrate for the epitaxial growth of graphene. The Si-face 3C-SiC is a proper substrate for the growth of large-area homogeneous graphene, particularly, multilayer graphene [9,10]. In addition, the electronic band structure of graphene epilayer grown on the C-face SiC are very different from that on Si-face [11][12][13], which considerably fascinates so much discussion.…”

Section: Potential Applications Of 3c-sicmentioning

confidence: 99%

“…(a) Band structure of monolayer graphene grown on the Si-face 3C-SiC(111). (b) Band structure of bilayer graphene grown on the Si-face 3C-SiC(111)[10].…”

mentioning

confidence: 99%

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Shi

2019

Linköping Studies in Science and Technology. Dissertations

Self Cite

View full text Add to dashboard Cite

Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H-or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si-C bilayers along the c-axis crystal direction. Among different polytypes of SiC, 3C-SiC has attracted specific interest due to its prominent properties such as high electron mobility and low interface trap density in MOSFET devices. Moreover, with a relatively small bandgap of 2.36 eV and suitable conduction and valence band positions, 3C-SiC has also been considered as a promising material for solar water splitting application, which provides a completely renewable approach to convert solar energy into storable hydrogen fuel. However, the growth of high-quality 3C-SiC remains a great challenge for decades. Graphene, a single layer of sp 2-bonded carbon atoms, has shown outstanding electronic properties and becomes the most promising candidate for next-generation electronic and optoelectronic devices. Epitaxial growth of graphene on SiC substrates by sublimation of Si from SiC provides a feasible route to fabricate wafer-scale device-quality graphene. The most advantage of this method is that a variety of devices can be processed directly on graphene/SiC without any transfer process, which is needed in the case of graphene produced by exfoliation or CVD on metals. During past years, the growth of monolayer (ML) graphene on hexagonal SiC (6H-SiC, 4H-SiC) substrates has been extensively studied. However, it is challenging to grow large-area and uniform multilayer graphene on hexagonal SiC substrates due to the stepbunching issue during the sublimation growth. Multilayer graphene has recently attracted great interest due to its tunable electronic properties for various electronic and optoelectronic applications. It has been shown that the electronic properties of multilayer graphene are strongly influenced by its stacking sequence. In particular, the rhombohedral stacking sequence (ABC stacking) has shown its potential to introduce a flat band energy dispersion at the K points of the Brillouin zone, which would result in many exotic phases of matter such as superconductivity. Among various SiC polytypes, 3C-SiC is predicted to be the most suitable substrate for the epitaxial growth of rhombohedral multilayer graphene. This thesis work mainly covers the sublimation growth of high-quality Si-face and C-face 3C-SiC on off-oriented 4H-SiC, exploring the proper parameter window for the growth of

show abstract

“…In such a flat band, the role of electron-electron correlation is enhanced, possibly resulting in high T c superconductivity, charge-density wave, or magnetic orders. The scanning tunnelling spectroscopy and angleresolved photoemission spectroscopy experiments reveal the flat electronic bands near the K-point at the Fermi level [54][55][56][57]. First-principles calculations identify the electronic ground state as an antiferromagnetic state with a band gap of about 40 meV [58].…”

Section: The Tba Carrier Energy Band Structure Of the Multilayer Aa-smentioning

confidence: 99%

The recurrent relations for the electronic band structure of the multilayer graphene

Davydov

2018

Proc. R. Soc. A.

View full text Add to dashboard Cite

show abstract

Flat-Band Electronic Structure and Interlayer Spacing Influence in Rhombohedral Four-Layer Graphene

Cited by 21 publications

References 35 publications

Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

The recurrent relations for the electronic band structure of the multilayer graphene

Contact Info

Product

Resources

About