The band structure
on the surface might be influenced by the abruptly
ended periodic structure and change the physical properties of the
semiconductor. By using the density functional theory, this research
also demonstrates that the Si unit cell has the calculated room-temperature
electrical conductivity as 4.01 × 10–6 (Ω–1 cm–1), similar to the experimental
result. Thus, the Si(111) plane structures are calculated, and we
found out that the one-layer and two-layer plane structures have the
theoretical room-temperature electrical conductivities as 129.68 (Ω–1 cm–1) and 547.80 (Ω–1 cm–1), respectively. In addition, the results
reveal that the conduction band and valance band of the Si(111) one-layer
and two-layer structures will connect on the ⟨111⟩ direction,
mainly contributed by Si 3p orbitals. Thus, the band structure at
the ⟨111⟩ direction on the Si(111) surface has variation
and increases the electrical conductivity to 7 to 8 orders compared
to the intrinsic Si and offers new surface science and surface engineering
concepts for future applications.