DOI: 10.1109/itec-ap.2014.6940938
View full text

Abstract: Other than the conventional Fourier model, the carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by a fast Finite Differential Method in PSPICE. The paper presents the physical basis and the practical consideration of the new modeling approach of PiN Diode and IGBT. The models are also verified by simulations and experiments.