Fingerprints of relaxor ferroelectrics: Characteristic hierarchical domain configurations and quantitative performances

Bian, Jihong; Xue, Pan; Zhu, Ren; Wang, Lei; Yang, Bian; Li, Tao; Hu, Qingyuan; Shen, Lvkang; Wang, Jianwei; Lu, Guanghao; Yang, Yaodong

doi:10.1016/j.apmt.2020.100789

Cited by 12 publications

(9 citation statements)

References 43 publications

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“…The effective piezoelectric constant d33 is high at an appropria Furthermore, we analyzed the local piezoresponse and effective d 33 extracted from these local loops. Local piezoresponse and effective d 33 are defined and calculated by two formulas with different variables [34]:…”

Section: Resultsmentioning

confidence: 99%

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Zhang

Wang

et al. 2021

Coatings

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The stacked single-unit cell Ba1-xSrxTiO3 (BSTO) thin film designed by the high-throughput method is fabricated by layer-by-layer deposition by laser molecular beam epitaxy, and its ferroelectric and dielectric characteristics as a function of Sr concentration are comprehensively investigated. The permittivity of BSTO exhibits a monotonous increase by Sr with a plateau in the region of 14% < Sr < 85%. Meanwhile, at the low Sr doping regime, the piezoelectric response has been discovered, and the maximum piezoresponse and d33 can reach approximately 139.05 pm and 88 pm/V once an appropriate Ba/Sr ratio is formed, exhibiting a coexistence of a dielectric property and giant piezoresponse. This effective piezoelectric constant d33 value is significantly larger than the conventional chemical doping scenarios, suggesting that the intra-plane interaction is crucial for designing future promising dielectric and ferroelectric thin films via high-throughput technologies.

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Section: Resultsmentioning

confidence: 99%

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Zhang

Wang

et al. 2021

Coatings

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“…A scanned square with a length of 10 µm was divided into three regions, that is, the initial region without switching located on the outer side, the region switched using a negative voltage of −8 V located at the center, and the regions switched using a positive voltage of 8 V on the inner side, as the schematic shows in Figure 5g. The in-depth assessment of the piezoelectric response of the PZT thin films involved measuring the local piezoelectric responses, including voltage-amplitude and voltagephase curves [30], as depicted in Figure 6. Remarkable asymmetry was exhibited in the amplitude curves of PZT films on different types of substrates, likely originating from interface effects between the substrates and the PZT thin films.…”

Section: Pt/mica Submentioning

confidence: 99%

“…The in-depth assessment of the piezoelectric response of the PZT thin films involved measuring the local piezoelectric responses, including voltage-amplitude and voltagephase curves [30], as depicted in Figure 6. Remarkable asymmetry was exhibited in the amplitude curves of PZT films on different types of substrates, likely originating from in-terface effects between the substrates and the PZT thin films.…”

Section: Pt/mica Submentioning

confidence: 99%

“…This suggests that, considering the current fabrication conditions, mica substrates buffered with Pt as both the bottom electrode and the buffer layer are the preferred option for manufacturing flexible piezoelectric thin films. The in-depth assessment of the piezoelectric response of the PZT thin films involved measuring the local piezoelectric responses, including voltage-amplitude and voltagephase curves [30], as depicted in Figure 6. Remarkable asymmetry was exhibited in the amplitude curves of PZT films on different types of substrates, likely originating from interface effects between the substrates and the PZT thin films.…”

Section: Pt/mica Submentioning

confidence: 99%

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Bottom Electrode Effects on Piezoelectricity of Pb(Zr0.52,Ti0.48)O3 Thin Film in Flexible Sensor Applications

Yuan,

Gao,

et al. 2023

Materials

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Piezoelectric thin films grown on a mechanical, flexible mica substrate have gained significant attention for their ability to convert mechanical deformation into electrical energy though a curved surface. To extract the generated charge from the PZT thin films, bottom electrodes are typically grown on mica substrates. However, this bottom electrode also serves as a buffering layer for the growth of PZT films, and its impact on the piezoelectric properties of PZT thin films remains understudied. In this work, the effect of Pt and LaNiO3 bottom electrodes on the piezoelectric effect of a Pb(Zr0.52,Ti0.48)O3 thin film was investigated. It was observed that the PZT thin films on LNO/Mica substrate possessed weaker stress, stronger (100) preferred orientation, and higher remanent polarization, which is beneficial for a higher piezoelectric response theoretically. However, due to insufficient grain growth resulting in more inactive grain boundaries and lattice imperfections, the piezoelectric coefficient of the PZT thin film on LNO/Mica was smaller than that of the PZT thin film on a Pt/Mica substrate. Therefore, it is concluded that, under the current experimental conditions, PZT films grown with Pt as the bottom electrode are better suited for applications in flexible piezoelectric sensor devices. However, when using LNO as the bottom electrode, it is possible to optimize the grain size of PZT films by adjusting the sample preparation process to achieve piezoelectric performance exceeding that of the PZT/Pt/Mica samples.

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“…Pb(Mg 1/3 Nb 2/3 )O 3 (PMN) and PbTiO 3 (PT) are typical relaxors and classic ferroelectric systems featuring short-range-ordered polar nanoregions and long-range-ordered domains, respectively. The increased concentration of PT leads to an increased off-center polar displacement within the unit cell accompanied by mechanical stress [29,30] . To accommodate the elastic strain, smaller domains are self-assembled into larger ones with orientations along the polarization variants.…”

Section: Introductionmentioning

confidence: 99%

Varied domain structures in 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ single crystals

Zhang,

Wang,

et al. 2023

Microstructures

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Single crystals of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-30PT) with a composition close to the morphotropic phase boundary have demonstrated remarkable electromechanical properties, stimulating intensive research interest in the field of piezoelectrics. Domain structures have long been associated with their overall piezoelectric properties, thereby garnering particular research interest for the enhancement of piezoelectric properties. Here, we report on three distinct domain structures in this material. Through a combination of X-ray diffraction reciprocal space mapping and piezoresponse force microscopy measurements, an M A crystal structure has been confirmed. The three-dimensional polar vectors of the three domain structures have been reconstructed with two 4M A and one 2M A domain structures. Correlations between different domain structures and their local electrical switching properties have been revealed. Our study of the PMN-30PT single crystal examines diverse domain structures at the mesoscale in detail, which provides valuable insight into the relationship between structures and properties of the material.

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Fingerprints of relaxor ferroelectrics: Characteristic hierarchical domain configurations and quantitative performances

Cited by 12 publications

References 43 publications

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Bottom Electrode Effects on Piezoelectricity of Pb(Zr0.52,Ti0.48)O3 Thin Film in Flexible Sensor Applications

Varied domain structures in 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ single crystals

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Fingerprints of relaxor ferroelectrics: Characteristic hierarchical domain configurations and quantitative performances

Cited by 12 publications

References 43 publications

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Bottom Electrode Effects on Piezoelectricity of Pb(Zr0.52,Ti0.48)O3 Thin Film in Flexible Sensor Applications

Varied domain structures in 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystals

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Product

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Varied domain structures in 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ single crystals