Film-thickness and composition dependence of epitaxial thin-film PZT-based mass-sensors

Nguyen, Minh D.; Dekkers, Matthijn; Vu, Hung V.; Rijnders, Guus

doi:10.1016/j.sna.2013.05.004

Cited by 43 publications

(40 citation statements)

References 61 publications

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“…The cantilevers were produced from a Silicon-On-Insulator (SOI) wafer (see the Supporting Information), and the tip deflection was measured with a scanning laser Doppler vibrometer (LDV), driven by the piezoelectric stack at an AC-amplitude of ±30 kV cm –1 (at a DC offset voltage of 30 kV cm –1 ) and 8 kHz frequency (see Figure S7). The process for fabricating piezoelectric driven Si cantilevers has been described in a previous paper 60 and is depicted schematically in Figure S6. We note here that one cannot directly compare the obtained values of the columnar films in this report with those from dense films, for which the elastic properties are well-known.…”

Section: Methodsmentioning

confidence: 99%

Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains

Nguyen

Houwman

Dekkers

et al. 2017

ACS Appl. Mater. Interfaces

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Pb(Zr0.52Ti0.48)O3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelectric response of the thin film. The film deposited at low pulse rate has a denser columnar microstructure, which improves the transverse piezoelectric coefficient (d31f) and ferroelectric remanent polarization (Pr), whereas the less densely packed columnar grains in the film deposited at high pulse rates give rise to a significantly higher longitudinal piezoelectric coefficient (d33f) value. The effect of film thickness on the ferroelectric and piezoelectric properties of the PZT films was also investigated. With increasing film thickness, the grain column diameter gradually increases, and also the average Pr and d33f values become larger. The largest piezoelectric coefficient of d33f = 408 pm V–1 was found for a 4-μm film thickness. From a series of films in the thickness range 0.5–5 μm, the z-position dependence of the piezoelectric coefficient could be deduced. A local maximum value of 600 pm V–1 was deduced in the 3.5–4.5 μm section of the thickest films. The dependence of the film properties on film thickness is attributed to the decreasing effect of the clamping constraint imposed by the substrate and the increasing spatial separation between the grains with increasing film thickness.

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Section: Methodsmentioning

confidence: 99%

Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains

Nguyen

Houwman

Dekkers

et al. 2017

ACS Appl. Mater. Interfaces

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“…The process for fabricating piezoelectric driven Si cantilevers has been described in a previous paper [16]. Cantilever structures consisting of a piezoelectric stack (SRO/PZT/SRO or LNO/PZT/LNO) on an YSZ and CeO 2 /YSZ buffered 10-mm Si-thick supporting layer, were obtained by backside etching of a silicon-on-insulator (SOI) wafer.…”

Section: Methodsmentioning

confidence: 99%

“…Material parameters used are given in Ref. [16]. The piezoelectric parameter e31 ,f is calculated as e31 ,f = d31 ,f /(s11 , p + s12 ,p ), where s11 ,p and s12 ,p are the elastic compliances of the piezoelectric film.…”

Section: Cantilever Characterizationmentioning

confidence: 99%

“…Using appropriate conducting oxide buffer layers it is possible to fabricate all-oxide epitaxial layer devices, with much better or nearly perfect in-plane registry and significantly improved lifetime and properties [12,13]. Recently, epitaxial ferroelectric Pb(Zr,Ti)O 3 (PZT) thin films, especially with the composition Pb(Zr 0.52 Ti 0.48 )O 3 , have attracted considerable attention in device applications because of their often superior properties over polycrystalline thin films [14][15][16]. Several studies show that the growth of ferroelectric devices in the form of epitaxial thin films can be performed on both single-crystals (such as SrTiO 3 , LaAlO 3 and MgO) and Si substrates with different conducting perovskite layers as the bottom-electrode .…”

Section: Introductionmentioning

confidence: 99%

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Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 thin films on all-oxide layers buffered silicon

Nguyen

Houwman

et al. 2015

Materials Research Bulletin

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“…Furthermore, extra mass inhibits the vibration characteristics of the eardrum [2]. Pulsed Laser Deposited (PLD) PZT has been preferred among other thin film piezoelectric alternatives for acoustic sensing of vibration due to its superior ferroelectric and piezoelectric properties [3]. Figure 1 shows the proposed system for sensing the incoming sound, which consists of several cantilever beams resonating at specific frequencies within the hearing band.…”

Section: Design and Modellingmentioning

confidence: 99%

Thin Film PZT Acoustic Sensor for Fully Implantable Cochlear Implants

İlik

Koyuncuoğlu

Uluşan

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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This paper presents design and fabrication of a MEMS-based thin film piezoelectric transducer to be placed on an eardrum for fully-implantable cochlear implant (FICI) applications. Resonating at a specific frequency within the hearing band, the transducer senses eardrum vibration and generates the required voltage output for the stimulating circuitry. Moreover, high sensitivity of the sensor, 391.9 mV/Pa @900 Hz, decreases the required power for neural stimulation. The transducer provides highest voltage output in the literature (200 mVpp @100 dB SPL) to our knowledge. A multi-frequency piezoelectric sensor, covering the daily acoustic band, is designed based on the test results and validated through FEA. The implemented system provides mechanical filtering, and mimics the natural operation of the cochlea. Herewith, the proposed sensor overcomes the challenges in FICI operations and demonstrates proof-of-concept for next generation FICIs.

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Film-thickness and composition dependence of epitaxial thin-film PZT-based mass-sensors

Cited by 43 publications

References 61 publications

Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains

Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains

Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 thin films on all-oxide layers buffered silicon

Thin Film PZT Acoustic Sensor for Fully Implantable Cochlear Implants

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